IP Library Granted Patent US 12,102,011
Granted Patent B2
US 12,102,011 · App. 17/999,578 · Granted Sep 24, 2024

Magnetic sensor comprising magnetoresistive elements and system for programming such magnetic sensor

Inventors: Andrey Timopheev (Vif, FR); Nikita Strelkov (Meylan, FR); Jeffrey Childress (San Jose, CA)
Assignee: Allegro MicroSystems, LLC
H10N50/10H10N50/80
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Quick Facts
Patent No.
US 12,102,011
App. No.
17/999,578
Granted
Sep 24, 2024
Kind
B2
Abstract

A magnetic sensor including a plurality of magnetoresistive elements; each magnetoresistive element including a ferromagnetic layer having a magnetization that is orientable at or above a threshold temperature; the magnetic sensor further includes a plasmonic structure destined to be irradiated by electromagnetic radiation and including a spatially periodic plasmonic array of metallic structures. The period of the plasmonic array and the lateral dimension of the metallic structures are adjusted to obtain plasmon resonance of the plasmonic structure for a given wavelength of the electromagnetic radiation. The plasmonic array is arranged in the magnetic sensor such as to heat the first ferromagnetic layer at or above the threshold temperature, from the enhanced absorption of the electromagnetic radiation by plasmon resonance. The present disclosure further concerns a system including the sensor and an emitting device configured to emit electromagnetic radiation.

Claims (34)

1. A magnetic sensor comprising a plurality of magnetoresistive elements; each magnetoresistive element comprising a MTJ including a first ferromagnetic layer having a first magnetization being pinned below a threshold temperature and free at or above the threshold temperature, such that the first magnetization can be switched when first ferromagnetic layer is at the high temperature threshold during a programming operation;

the magnetic sensor further comprising a plasmonic structure destined to be irradiated by electromagnetic radiation, the plasmonic structure comprising a spatially periodic plasmonic array of metallic structures, the period of the plasmonic array and the lateral dimension of the metallic structures being adjusted to obtain plasmon resonance of the plasmonic structure for a given wavelength of the electromagnetic radiation;

wherein the plasmonic array is arranged in the magnetic sensor such as to heat the first ferromagnetic layer at or above the threshold temperature, from the enhanced absorption of the electromagnetic radiation by plasmon resonance;

wherein the magnetic sensor comprises an array of sensor branches, each sensor branch comprising the plurality of magnetoresistive elements;

wherein the plasmonic structure comprises a plurality of plasmonic subarrays, each plasmonic subarray comprising a periodic array of metallic structures and being arranged in alternance with the sensor branches; and

wherein the plasmonic structure comprises at least a first plasmonic subarray and a second plasmonic subarray having a different resonance response from the first plasmonic subarray with respect to the polarization or wavelength of the electromagnetic radiation.

2. The magnetic sensor, according to claim 1 , wherein the period of the plasmonic array and the lateral dimension of the metallic structures are adjusted to obtain plasmon resonance of the plasmonic structure, for a given wavelength of the electromagnetic radiation.

3. The magnetic sensor, according to claim 1 ,

wherein the MTJ is between a top surface and a front-end circuit of magnetic sensor; and

wherein the plasmonic structure is provided between the top surface and the front-end circuit.

4. The magnetic sensor, according to claim 3 ,

wherein the magnetoresistive element includes a top metal connector layer between the MTJ and the top surface; and

wherein the plasmonic structure is provided in the plane of the top metal connector layer.

5. The magnetic sensor, according to claim 3 ,

wherein the magnetoresistive element includes a bottom metal connector layer between the MTJ and the front-end circuit; and

wherein the plasmonic structure is provided in the plane of the bottom metal connector layer.

6. The magnetic sensor, according to claim 1 ,

wherein the plasmonic structure is embedded in a dielectric layer; and

wherein the period of the plasmonic array and the lateral dimension of the metallic structures are adjusted to obtain plasmon resonance of the plasmonic structure, for a given ratio of the wavelength of the electromagnetic radiation to the refractive index of the dielectric layer.

7. The magnetic sensor, according to claim 1 , wherein the plasmonic structure further comprises an auxiliary plasmonic structure configured to adjust absorption of the electromagnetic radiation.

8. The magnetic sensor, according to claim 7 , wherein the auxiliary plasmonic structure comprises a spatially periodic arrangement of metallic structures or a continuous metallic layer.

9. The magnetic sensor, according to claim 3 ,

wherein the plasmonic structure further comprises an auxiliary plasmonic structure configured to adjust absorption of the electromagnetic radiation, and

wherein the auxiliary plasmonic structure and the plasmonic array are between the magnetoresistive elements and the top surface.

10. A system comprising:

the magnetic sensor according to claim 1 ; and

an electromagnetic radiation emitting device configured to emit electromagnetic radiation that irradiates an illuminated region of the magnetic sensor and that has a wavelength adapted to generate plasmon resonance of the plasmonic structure.

11. The system according to claim 10 , wherein illuminated region encompasses at least one magnetoresistive element.

12. The system according to claim 10 , wherein the electromagnetic radiation emitting device comprises a laser emitting device directing a focused laser beam to the illuminated region of the magnetic sensor.

13. The system according to claim 10 , wherein the electromagnetic radiation emitting device is movable over the surface of the magnetic sensor such as to selectively heat the one or several magnetoresistive elements encompassed by the illuminated region.

14. The system according to claim 10 ,

wherein the plasmonic structure comprises at least a first plasmonic subarray and a second plasmonic subarray having a different resonance response from the first plasmonic subarray with respect to the polarization or wavelength of the electromagnetic radiation; and

wherein the wavelength and/or the polarization of the electromagnetic radiation is adjustable in order to correspond to the resonant condition of one of the first or second plasmonic subarray.

15. The system according to claim 10 , wherein the plasmonic array comprises a two-dimensional lattice having substantially equal the distance between two adjacent metallic structures and wherein the plasmonic array comprises any one of a square lattice rectangular lattice, a hexagonal lattice or a rhombic lattice.

Assignments (2)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jan 18, 2024
From: CROCUS TECHNOLOGY SA
To: ALLEGRO MICROSYSTEMS, LLC
Reel/Frame 066350/0669 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Oct 23, 2023
From: TIMOPHEEV, ANDREY; STRELKOV, NIKITA; CHILDRESS, JEFFREY
To: CROCUS TECHNOLOGY SA
Reel/Frame 065309/0809 →
Priority Claims (1)
EP 20315270 · May 28, 2020 · regional
Continuity (1)
Related Publication 20230292624A1 · Sep 14, 2023