Magnetic element with thermally assisted writing
View Patent ↗Magnetic element with thermally-assisted magnetic-field writing or thermally-assisted spin-transfer writing, comprising: a reference magnetic layer having a fixed direction magnetization; a storage magnetic layer exchange-pinned with an antiferromagnetic layer, wherein the magnetization direction of the storage layer can vary when said element can be heated to a temperature at least higher than a critical temperature of the antiferromagnetic layer; a tunnel barrier, provided between the reference layer and the storage layer; wherein the magnetic reference layer, and/or the magnetic storage layer includes at least one electrically-resistive thin layer for heating the magnetic element. The magnetic element disclosed herein has a voltage gain of typically 10 to 50% compared to conventional magnetic elements and shows a reduction of the stress induced during a writing operation as well as a reduction of the aging.
1. Magnetic element with thermally-assisted magnetic-field writing or thermally-assisted spin-transfer writing, comprising:
a reference magnetic layer having a fixed direction magnetization;
a storage magnetic layer exchange-pinned with an antiferromagnetic layer, wherein the magnetization direction of the storage layer can vary when said element can be heated to a temperature at least higher than a critical temperature of the antiferromagnetic layer;
a tunnel barrier provided between the reference layer and the storage layer;
characterized in that
the magnetic reference layer and/or the magnetic storage layer includes at least one electrically-resistive thin layer for heating the magnetic element.
2. Magnetic element according to claim 1 , wherein
said at least one thin layer is comprised inside and/or on one of the faces of the ferromagnetic layer making up the reference layer and/or of the storage layer.
3. Magnetic element according to claim 1 , wherein
said at least one thin layer is comprised at the interface between the storage layer and antiferromagnetic layer.
4. Magnetic element according to claim 1 , wherein
said at least one thin layer is further comprised inside the antiferromagnetic layer.
5. Magnetic element according to claim 1 ,
further comprising an antiferromagnetic layer pinning the reference layer within which said at least one thin layer is also comprised.
6. Magnetic element according to claim 1 , wherein said at least one thin layer has an electric resistivity substantially ten times lower than the resistance of the tunnel barrier.
7. Magnetic element according to claim 1 , wherein the thickness of said at least one thin layer is at most equal to one nanometer.
8. Magnetic element according to claim 1 , wherein said at least one thin layer is discontinuous.
9. Magnetic element according to claim 1 , wherein said at least one thin layer is made of metal oxide or metal nitride.
10. Magnetic element according to claim 9 , wherein the metal coming into the composition of the metal oxide or nitride making up said at least one thin layer is chosen in the group including tantalum, aluminum, magnesium, zirconium, zinc and cobalt.
11. MRAM magnetic memory comprising a plurality of a magnetic elements with thermally-assisted magnetic-field writing or thermally-assisted spin-transfer writing, each comprising: a reference magnetic layer having a fixed direction magnetization; a storage magnetic layer exchange-pinned with an antiferromagnetic layer, wherein the magnetization direction of the storage layer can vary when said element can be heated to a temperature at least higher than a critical temperature of the antiferromagnetic layer; a tunnel barrier provided between the reference layer and the storage layer; wherein the magnetic reference layer and/or the magnetic storage layer includes at least one electrically-resistive thin layer for heating the magnetic element.