Patent Assignment
Reel/Frame 064658/0730
Change of Address
Recorded: 2023-08-21
Pages: 5
Assignor
CROCUS TECHNOLOGY SA
Executed: 2018-05-29
Assignee
CROCUS TECHNOLOGY SA
3 AVENUE DOYEN LOUIS WEIL, GRENOBLE CEDEX, 38025, FRANCE
Covered Properties
(61)
Ternary Content Addressable Magnetoresistive Random Access Memory Cell
Active Strap Magnetic Random Access Memory Cells Configured to Perform Thermally-Assisted Writing
Magnetic Memory with a Thermally Assisted Writing Procedure and Reduced Writing Field
Magnetic Memory with a Thermally Assisted Spin Transfer Torque Writing Procedure Using a Low Writing Current
Non-Volatile Logic Devices Using Magnetic Tunnel Junctions
Magnetic Memory with a Thermally Assisted Writing Procedure
Ultimate Magnetic Random Access Memory-Based Ternary Cam
Magnetic Element with Thermally Assisted Writing
Circuit for Generating Adjustable Timing Signals for Sensing a Self-Referenced Mram Cell
Mram-Based Memory Device with Rotated Gate
Magnetic Device with Optimized Heat Confinement
Method for Writing in a Mram-Based Memory Device with Reduced Power Consumption
Multilevel Magnetic Element
Thermally Assisted Magnetic Random Access Memory Element with Improved Endurance
Multibit Magnetic Random Access Memory Cell with Improved Read Margin
Magnetic Tunnel Junction Comprising a Polarizing Layer
Low Power Magnetic Random Access Memory Cell
Magnetic Random Access Memory Cell with a Dual Junction for Ternary Content Addressable Memory Applications
Information Processing Device Comprising a Read-Only Memory and a Method for Patching the Read-Only Memory
Multibit Cell with Synthetic Storage Layer
Magnetic Random Access Memory Cell with Improved Dispersion of the Switching Field
Method of Counter-Measuring Against Side-Channel Attacks
Magnetic Tunnel Junction with an Improved Tunnel Barrier
Magnetic Random Access Memory (Mram) Cell, Method for Writing and Reading the Mram Cell Using a Self-Referenced Read Operation
Application:
13/622,513 →
Publication:
US 2013/0077390
Self-Reference Magnetic Random Access Memory (Mram) Cell Comprising Ferrimagnetic Layers
Self-Referenced Mram Cell with Optimized Reliability
Self-Referenced Magnetic Random Access Memory Element Comprising a Synthetic Storage Layer
Self-Referenced Mram Cell and Method for Writing the Cell Using a Spin Transfer Torque Write Operation
MRAM Cell and Method for Writing to the MRAM Cell using a Thermally Assisted Write Operation with a Reduced Field Current
Self-Referenced Mram Element with Linear Sensing Signal
High Speed Magnetic Random Access Memory-Based Ternary Cam
Self-Referenced Magnetic Random Access Memory
Method for Writing to a Random Access Memory (Mram) Cell with Improved Mram Cell Lifespan
Mram Element Having Improved Data Retention and Low Writing Temperature
Magnetic Logic Unit (Mlu) Cell and Amplifier Having a Linear Magnetic Signal
Magnetic Logic Unit (Mlu) Cell and Amplifier Having a Linear Magnetic Signal
Self-Referenced Mram Element and Device Having Improved Magnetic Field
Thermally Assisted Multi-Level Mram Cell and Method for Writing a Plurality of Bits in the Mram Cell
Magnetic Random Access Memory (Mram) Cell with Low Power Consumption
Magnetoresistive Element with Oxygen Getting Layer Having Enhanced Exchange Bias and Thermal Stability for Spintronic Devices
Self-Referenced Magnetic Random Access Memory (Mram) and Method for Writing to the Mram Cell with Increased Reliability and Reduced Power Consumption
Magnetic Random Access Memory Cell with a Dual Junction for Ternary Content Addressable Memory Applications
Mram Element with Low Writing Temperature
Self-Referenced Mram Cell That Can Be Read with Reduced Power Consumption
Thermally-Assisted Mram Cells with Improved Reliability at Writing
Self-Referenced Memory Device and Method Using Spin-Orbit Torque for Reduced Size
Method for Measuring Three-Dimensional Magnetic Fields
Magnetic Sensor Cell for Measuring Three-Dimensional Magnetic Fields
Method for Writing to a Mram Device Configured for Self-Referenced Read Operation with Improved Reproducibly
Multi-Bit Mram Cell and Method for Writing and Reading to Such Mram Cell
Self-Referenced Multibit Mram Cell Having a Synthetic Antiferromagnetic Storage Layer
Mlu Based Accelerometer Using a Magnetic Tunnel Junction
Magnetic Sensor Cell for Measuring One- and Two-Dimensional Magnetic Fields and Method for Measuring Said Magnetic Fields Using the Magnetic Sensor Cell
Electrical Interconnecting Device for Mram-Based Magnetic Devices
Method for Writing in a Magnetic Device Having a Plurality of Magnetic Logical Unit Cells Using a Single Programming Current
Self-Referenced Mram Cell and Magnetic Field Sensor Comprising the Self-Referenced Mram Cell
Mram-Based Programmable Magnetic Device for Generating Random Numbers
Logic Gate Module for Performing Logic Functions Comprising a Mram Cell and Method for Operating the Same
Magnetic Device Configured to Perform an Analog Adder Circuit Function and Method for Operating Such Magnetic Device
Magnetic Memory Device That Is Protected Against Reading Using an External Magnetic Field and Method for Operating Such Magnetic Memory Device
Magnetoresistive-Based Signal Shaping Circuit for Audio Applications
Related Assignments
(4)
Other recorded transfers of the patents in this record — the chain of ownership.
Security Interest
Apr 13, 2018
From: CROCUS TECHNOLOGY, INC.
To: LLC "SBERBANK INVESTMENTS"
Reel/Frame 045938/0810 →
Release of Security Interest
Aug 30, 2023
From: LLC "SBERBANK INVESTMENTS"
To: CROCUS TECHNOLOGY, INC.
Reel/Frame 064783/0420 →
Assignment and Release Recorded at Reel 045938, Frame 0810 and Reel 064783 Frame 420 Erroneously Affect the Identified Patent. Ownership Never Changed.
Oct 23, 2023
From: CROCUS TECHNOLOGY SA
To: CROCUS TECHNOLOGY SA
Reel/Frame 065317/0136 →
Assignment of Assignor's Interest
Jan 18, 2024
From: CROCUS TECHNOLOGY SA
To: ALLEGRO MICROSYSTEMS, LLC
Reel/Frame 066350/0669 →