Granted Patent B2

US 9,989,599 · App. 15/028,114 · Granted Jun 5, 2018

Abstract

Claims (32)

1. Magnetic sensor cell comprising:

a heating current line;

a magnetic tunnel junction comprising a reference layer having a reference magnetization configured such that the reference magnetization is orientable in a predetermined direction substantially parallel to the plane of the reference layer when the magnetic tunnel junction is heated to a temperature threshold by the heating current line, a sense layer having a sense magnetization, and a tunnel barrier layer between the sense and reference layers; and

a magnetic device configured for providing a sense magnetic field configured for aligning the sense magnetization;

the sense magnetization being orientable between a direction parallel to the plane of the sense layer and a direction perpendicular to the plane of the sense layer when the sense magnetic field is provided.

2. The magnetic sensor cell according to claim 1 , wherein the sense magnetization is orientable with a magnitude of an external magnetic field being below 150 Oe.

3. The magnetic sensor cell according to claim 1 , wherein the sense magnetization has an initial orientation, in the absence of an external magnetic field, substantially perpendicular to the plane of the sense layer and an aligned orientation, in the presence of the sense magnetic field, being at least partly oriented parallel to the plane of the sense layer.

4. The magnetic sensor cell according to claim 1 , wherein the sense magnetization has an initial orientation, in the absence of an external magnetic field, substantially parallel to the plane of the sense layer and an aligned orientation, in the presence of the sense magnetic field, being at least partly oriented perpendicular to the plane of the sense layer.

5. The magnetic sensor cell according to claim 1 , wherein the sense layer comprises any one of or a combination of Fe, Co, Ni, Tb, Pt, Pd, Al, Dy, Ga, Mn, Ho, Nd or Sm, FePt, FePd, CoPt, CoPd, GdFeCo, TbFeCo, GaMn, GeMn or AlMn.

6. The magnetic sensor cell according to claim 5 , wherein the sense layer has a thickness comprised between 0.2 nm and 50 nm.

7. The magnetic sensor cell according to claim 1 , wherein the sense layer further comprises non-magnetic layer.

8. The magnetic sensor cell according to claim 7 , wherein the non-magnetic layer comprises any one of Pt, Pd, Ta, Hf, Nb, Cr, V, Cu, Au, Ti, Ag, Ru, W or an alloy comprising any one or a combination of these elements, or an oxide or an oxi-nitride.

9. The magnetic sensor cell according to claim 1 , further comprising a bias layer having a bias magnetization oriented perpendicular to the plane of the bias layer and generating a bias magnetic field on the sense magnetization oriented perpendicular to the plane of the sense layer.

10. The magnetic sensor cell according to claim 1 , wherein the magnetic device comprises a field line arranged parallel to the plane of the sense layer and for passing a field current such that the sense magnetic field is oriented parallel to the plane of the sense layer.

11. The magnetic sensor cell according to claim 1 , wherein the field line comprises a first line portion for passing a first field current and a second line portion for passing a second field current, the first and second line portions being arranged parallel to the plane of the sense layer, the sense magnetic field being generated by a combination of the first and second field currents, respectively.

12. The magnetic sensor cell according to claim 11 , wherein the field line further comprises a third field line for passing a third field current and arranged parallel to the plane of the sense layer, the sense magnetic field being generated by the first, second and third field currents, respectively.

13. A magnetic sensor device comprising:

a plurality of the magnetic sensor cell arranged in rows and columns, each magnetic sensor cell comprising a heating current line;

a magnetic tunnel junction including a reference layer having a reference magnetization configured such that the reference magnetization is orientable in a predetermined direction substantially parallel to the plane of the reference layer when the magnetic tunnel junction is heated to a temperature threshold by the heating current line, a sense layer having a sense magnetization, and a tunnel barrier layer between the sense and reference layers; and

a magnetic device configured for providing a sense magnetic field configured for aligning the sense magnetization;

the sense magnetization being orientable between a direction parallel to the plane of the sense layer and a direction perpendicular to the plane of the sense layer when the sense magnetic field is provided.

14. The magnetic sensor device according to claim 13 ,

wherein the field line comprises a first line portion for passing a first field current and a second line portion for passing a second field current, the first and second line portions being arranged parallel to the plane of the sense layer, the sense magnetic field being generated by a combination of the first and second field currents, respectively; and

wherein the first line portion and a second line portion are arranged for passing, respectively, the first and second field current independently from each other.

15. The magnetic sensor device according to claim 13 ,

wherein the field line comprises a first line portion for passing a first field current and a second line portion for passing a second field current, the first and second line portions being arranged parallel to the plane of the sense layer, the sense magnetic field being generated by a combination of the first and second field currents, respectively; and

wherein the first and second line portions are electrically connected in series via a commutation means such that the first and second field current can be passed in the first and second line portions with the same polarity or with opposed polarity.

16. The magnetic sensor device according to claim 13 ,

wherein the field line comprises a first line portion for passing a first field current and a second line portion for passing a second field current, the first and second line portions being arranged parallel to the plane of the sense layer, the sense magnetic field being generated by a combination of the first and second field currents, respectively;

wherein the field line further comprises a third field line for passing a third field current and arranged parallel to the plane of the sense layer, the sense magnetic field being generated by the first, second and third field currents, respectively;

wherein the first and second field currents can be passed in the first and second line portions with opposed polarity such as to generate the sense magnetic field directed perpendicular to the plane of the sense layer; and

wherein the third field current can be passed in the third line portion such as to generate the sense magnetic field directed parallel to the plane of the sense layer.

Assignments (6)