Method for writing in a magnetic device having a plurality of magnetic logical unit cells using a single programming current

1. A method for programming a magnetic device comprising a plurality of magnetic logical unit MLU cells using a single programming current; each including a magnetic tunnel junction comprising a ferromagnetic storage layer having a storage magnetization that is pinned at a low threshold temperature and freely orientable at a high threshold temperature, a ferromagnetic sense layer having a sense magnetization, and a tunnel barrier layer between the storage layer and the sense layer; a programming line physically separated from each of said plurality of MLU cells by an electrically non-conductive layer such that no current can pass directly from the programming line to the magnetic tunnel junction, and configured for passing a programming current pulse for programming a subset of said plurality of MLU cells, the subset comprising more than one MLU cell; the method comprising:

passing the programming current in the programming line for heating the magnetic tunnel junction of said MLU cells in the subset at the high threshold temperature such as to unpin the ferromagnetic storage magnetization of each of the MLU cells in the subset;

wherein the programming current is further adapted for generating a programming magnetic field adapted for switching the storage magnetization of each MLU cell in the subset in a programmed direction.

2. The method according to claim 1 , wherein said passing the programming current comprises:

passing a first pulse portion during a first time period, the first current having a first intensity adapted for inducing the write magnetic field capable of switching the storage magnetization, and heating the magnetic tunnel junction at the high threshold temperature; and

passing a second pulse portion during a second time period having a second intensity lower than the first intensity such as to induce the write magnetic field capable of switching the storage magnetization, and cool the magnetic tunnel junction at the low threshold temperature.

3. The method according to claim 2 , wherein the second intensity of the second pulse portion decreases in a monotonic manner during the second time period.

4. The method according to claim 3 , wherein the second intensity of the second pulse portion decreases at a decreasing rate such that the programming magnetic field induced by the second pulse portion is capable of switching the storage magnetization until the magnetic tunnel junction has reached the low threshold temperature.

5. The method according to claim 3 , wherein the second intensity of the second pulse portion is decreased stepwise.

6. The method according to claim 5 , wherein each step of the second pulse portion has a duration between about 1 ns and 1 h, and preferably between about 1 μs and 1 ms.

7. The method according to claim 2 , wherein the first pulse portion has a rise time of less than about5 μs and preferably less than about 100 ns.

8. The method according to claim 2 , wherein the first time period is of about few microseconds to few seconds.

9. The method according to claim 4 , wherein a decreasing rate of the second intensity is of about 1.7×10 4 A/μm 2 /s.

10. The method according to claim 2 , wherein said first pulse portion has a magnitude between about 1×10 −3 A/μm 2 and about 10 A/μm 2 .

11. The method according to claim 1 ,

wherein the magnetic device further comprises at least one extra field line configured for passing an extra field current pulse; and

wherein the method further comprises passing the extra field current pulse in said at least one extra field line such as to induce an extra magnetic field adapted for switching the storage magnetization in the programming direction in any one of said plurality of MLU cells; when the MLU cells are at the high threshold temperature.

12. The method according to claim 11 , wherein said at least one extra field line comprises at least two extra field lines, and wherein the extra field current pulse is passed in each of said at least two extra field lines.

13. The method according to claim 12 , wherein the extra field lines are arranged below the MLU cells, and wherein the extra field current pulse is passed in each of the extra field lines with the same polarity.

14. The method according to claim 12 , wherein the extra field lines are arranged below and above the MLU cells, and wherein the extra field current pulse passed in the extra field lines arranged below the MLU cells has a polarity opposed to the one of the extra field current pulse passed in the extra field lines arranged above the MLU cells.

15. The method according to claim 1 ,

wherein the programming line comprises a first branch arranged for programming a first subset comprising one or more rows of said plurality of MLU cells, and a second branch arranged for programming a second subset comprising one or more rows of said plurality of MLU cells adjacent to said one or more rows of said plurality of MLU cells of the first subset; and

wherein the method comprises:

passing a first current portion of the programming current pulse in the first branch such as to program the storage magnetization of the MLU cells in the first subset in a first programmed direction, and passing a second current portion of the programming current pulse in the second branch such as to program the storage magnetization of the MLU cells in the second subset in a second programmed direction opposed to the first programmed direction.