Thermally assisted magnetic random access memory element with improved endurance

1. A magnetic memory element suitable for a thermally-assisted switching write operation, comprising a current line in electrical communication with one end of a magnetic tunnel junction, the magnetic tunnel junction comprising:

a first ferromagnetic layer having a fixed magnetization;

a second ferromagnetic layer having a magnetization that can be freely aligned at a predetermined high temperature threshold; and

a tunnel barrier provided between the first and second ferromagnetic layer;

the current line being adapted to pass a heating current through the magnetic tunnel junction during the write operation;

characterized in that said magnetic tunnel junction further comprises:

at least one heating element being adapted to generate heat when the heating current is passed through the magnetic tunnel junction; and

a thermal barrier in series with said at least one heating element, said thermal barrier being adapted to confine the heat generated by said at least one heating element within the magnetic tunnel junction.

2. Magnetic memory element according to claim 1 , wherein

said second ferromagnetic layer is exchange-pinned with an antiferromagnetic layer at a predetermined low temperature threshold and has its magnetization that can be freely aligned at the predetermined high temperature threshold.

3. Magnetic memory element according to claim 1 , wherein

said at least one heating element is such that at least one of the first and second ferromagnetic layer is between the tunnel barrier and said at least one heating element.

4. Magnetic memory element according to claim 1 , wherein

said at least one heating element is made from MgO or CoSiN.

5. Magnetic memory element according to claim 1 , wherein

said at least one heating element has a resistance-area product comprised between 0 and 1.5 times a resistance-area product of the tunnel barrier.

6. Magnetic memory element according to claim 1 , wherein

said at least one heating element has a thickness comprised between 1 and 10 nm.

7. Magnetic memory element according to claim 1 , wherein

the thermal barrier is in contact with a surface of said at least one heating element opposed to the one in contact with one of the antiferromagnetic storage and reference layer.

8. Magnetic memory element according to claim 1 , wherein

said at least one heating element comprises a first heating element and a second heating element.

9. Magnetic memory element according to claim 8 , wherein

said first heating element is such that the second ferromagnetic layer is between the tunnel barrier and the first heating element, and the second heating element is such that the first ferromagnetic layer is between the tunnel barrier and the second heating element.

10. Magnetic memory element according to claim 1 , wherein

the electrical conductivity of the thermal barrier is higher by a factor of about ten compared with that of the tunnel barrier.

11. A magnetic memory device comprising a plurality of magnetic memory elements, each magnetic memory element comprising: magnetic tunnel junction comprising a first ferromagnetic layer having a fixed magnetization, a second ferromagnetic layer having a magnetization that can be freely aligned at a high temperature threshold, a tunnel barrier provided between the first and second ferromagnetic layer, at least one heating element, and a thermal barrier in series with said at least one heating element; the magnetic memory device further comprising a current line in electrical communication with one end of the magnetic tunnel junction; said at least one heating element being adapted to generate heat when a heating current is passed in the magnetic tunnel junction via the current line; said thermal barrier being adapted to confine the heat generated by said at least one heating element within the magnetic tunnel junction.