Magnetic sensor cell for measuring one- and two-dimensional magnetic fields and method for measuring said magnetic fields using the magnetic sensor cell
A magnetic sensor cell including a magnetic tunnel junction including a reference layer having a reference magnetization oriented substantially parallel to the plane of the reference layer, a sense layer having a sense magnetization, and a tunnel barrier layer between the sense and reference layers. The sense layer includes an intrinsic anisotropy substantially perpendicular to the plane of the sense layer such that the sense magnetization is orientable between an initial direction perpendicular to the plane of the sense layer and a direction parallel to the plane of the sense layer; the intrinsic anisotropy having in anisotropy field being above 150 Oe.
1. A magnetic sensor cell comprising:
a magnetic tunnel junction comprising a reference layer having a reference magnetization oriented substantially parallel to a plane of the reference layer, a sense layer having a sense magnetization, and a tunnel barrier layer between the sense and reference layers, wherein:
the sense layer comprising an intrinsic anisotropy being substantially perpendicular to a plane of the sense layer such that the sense magnetization is orientable from an initial direction perpendicular to the plane of the sense layer to a direction parallel to the plane of the sense layer,
wherein the intrinsic anisotropy has an anisotropy field above 150 Oe.
2. The magnetic sensor cell according to claim 1 , wherein the sense layer comprises a ferromagnetic layer comprising a Co x Fe y B z alloy.
3. The magnetic sensor cell according to claim 2 , wherein the ferromagnetic layer comprises Co 20 Fe 60 B 20 .
4. The magnetic sensor cell according to claim 2 , wherein the ferromagnetic layer has a thickness between 0.5 nm and 2 nm.
5. The magnetic sensor cell according to claim 4 , wherein the ferromagnetic layer has a thickness of 1.5 nm.
6. The magnetic sensor cell according to claim 2 , wherein the sense layer comprises a multilayer configuration comprising at least the ferromagnetic layer and a non-magnetic layer.
7. The magnetic sensor cell according to claim 6 , wherein the non-magnetic layer comprises any one or a combination of these elements: Ta, W, Mo, Nb, Zr, Ti, MgO, Hf.
8. The magnetic sensor cell according to claim 6 , wherein the non-magnetic layer has a thickness between 0.1 nm and 0.4 nm.
9. The magnetic sensor cell according to claim 1 , wherein the tunnel barrier layer comprises an insulating material including MgO, and the tunnel barrier layer has a thickness of about 1 nm.
10. The magnetic sensor cell according to claim 1 , comprising a first array and a second array, each array comprising a plurality of the magnetic tunnel junction, wherein the magnetic tunnel junctions of the first array and the magnetic tunnel junctions of the second array have their storage magnetization aligned substantially at 90° from each other.
11. A method for sensing a one-dimensional and two-dimensional external magnetic field using a magnetic sensor cell comprising a magnetic tunnel junction comprising a reference layer having a reference magnetization oriented substantially parallel to a plane of the reference layer, a sense layer having a sense magnetization, and a tunnel barrier layer between the sense and reference layers, wherein the sense layer comprises an intrinsic anisotropy being substantially perpendicular to a plane of the sense layer such that the sense magnetization is orientable from an initial direction perpendicular to the plane of the sense layer to a direction parallel to the plane of the sense layer, the intrinsic anisotropy has an anisotropy field above 150 Oe, and the sense magnetization is initially oriented perpendicular to the plane of the sense layer; the method comprising:
pinning the reference magnetization such that it does not move in the external magnetic field;
subjecting the magnetic sensor cell to the external magnetic field; and
measuring a resistance of the magnetic sensor cell.
12. The method according to claim 11 , wherein said measuring a resistance is performed by passing a sense current in the magnetic tunnel junction.
13. The method according to claim 11 , wherein the resistance is proportional to a component of the sense magnetization being oriented parallel to the plane of the sense layer.
14. The method according to claim 11 , wherein the resistance is proportional to an angle between a component of the sense magnetization being oriented parallel to the plane of the sense layer relative to the orientation of the reference magnetization.
15. The method according to claim 11 , wherein comprising a first array and a second array, each array comprising a plurality of the magnetic tunnel junction, wherein the magnetic tunnel junctions of the first array and the magnetic tunnel junctions of the second array have their storage magnetization aligned substantially at 90° from each other; and wherein the method comprises measuring the two orthogonal in-plane components of the external magnetic field by measuring a resistance of each of the first and second array.
16. Magnetic sensor cell comprising:
a magnetic tunnel junction comprising a reference layer having a reference magnetization oriented substantially parallel to a plane of the reference layer, a sense layer having a sense magnetization, and a tunnel barrier layer between the sense and reference layers, wherein:
the sense layer comprises an intrinsic anisotropy being substantially perpendicular to a plane of the sense layer such that the sense magnetization is orientable from an initial direction perpendicular to the plane of the sense layer to a direction parallel to the plane of the sense layer,
the intrinsic anisotropy has an anisotropy field above 150 Oe, and
the magnetic tunnel junction is configured to sense a magnitude of the external magnetic field along the plane of the reference layer, from the relative magnitude and orientation of the reference magnetization and the component of the sense magnetization parallel to the plane of the sense layer.
17. The magnetic sensor cell according to claim 1 , wherein a thickness of the tunnel barrier layer is between 1 nm and 3 nm, such that a tunnel magnetoresistance of the magnetic tunnel junction is greater than 50%.
18. The method according to claim 11 , wherein a thickness of the tunnel barrier layer is between 1 nm and 3 nm, such that a tunnel magnetoresistance of the magnetic tunnel junction is greater than 50%.
19. The magnetic sensor cell according to claim 16 , wherein a thickness of the tunnel barrier layer is between 1 nm and 3 nm, such that a tunnel magnetoresistance of the magnetic tunnel junction is greater than 50%.
20. The method according to claim 11 , wherein the measured resistance is proportional to the relative magnitude of the sense magnetization component parallel to the plane of the sense layer.