Magnetic random access memory cell with a dual junction for ternary content addressable memory applications
View Patent ↗The present disclosure concerns a MRAM cell comprising a first tunnel barrier layer comprised between a soft ferromagnetic layer having a free magnetization and a first hard ferromagnetic layer having a first storage magnetization; a second tunnel barrier layer comprised between the soft ferromagnetic layer and a second hard ferromagnetic layer having a second storage magnetization; the first storage magnetization being freely orientable at a first high predetermined temperature threshold and the second storage magnetization being freely orientable at a second predetermined high temperature threshold; the first high predetermined temperature threshold being higher than the second predetermined high temperature threshold. The MRAM cell can be used as a ternary content addressable memory (TCAM) and store up to three distinct state levels. The MRAM cell has a reduced size and can be made at low cost.
1. A magnetic random access memory (MRAM) cell to be used as a ternary content addressable memory comprising a magnetic element comprising a soft ferromagnetic layer having a magnetization that can be freely aligned; a first hard ferromagnetic layer having a first storage magnetization; a first tunnel barrier layer comprised between the soft ferromagnetic layer and the first hard ferromagnetic layer; a second hard ferromagnetic layer having a second storage magnetization; and a second tunnel barrier layer comprised between the soft ferromagnetic layer and the second hard ferromagnetic layer;
the first storage magnetization being be freely orientable at a first high predetermined temperature threshold and the second storage magnetization being freely orientable at a second predetermined high temperature threshold; the first high predetermined temperature threshold being higher than the second predetermined high temperature threshold.
2. MRAM cell according to claim 1 , wherein the magnetic element further comprises a first antiferromagnetic layer pinning the first storage magnetization below the first high predetermined temperature threshold, and a second antiferromagnetic layer pinning the second storage magnetization below the second predetermined high temperature threshold.
3. MRAM cell according to claim 1 , wherein the first hard ferromagnetic layer has a first junction resistance-area product and the second hard ferromagnetic layer has a second junction resistance-area product that is substantially equal to the first junction resistance-area product.
4. MRAM cell according to claim 1 , wherein the first hard ferromagnetic layer comprises a NiFe/CoFeB-based alloy and the second hard ferromagnetic layer comprises a CoFeB/NiFe-based alloy.
5. MRAM cell according to claim 1 , wherein the first antiferromagnetic layer comprises an IrMn-based alloy and the second antiferromagnetic layer comprises a FeMn-based alloy.
6. MRAM cell according to claim 1 , wherein the soft ferromagnetic layer comprises a CoFeB-based alloy.
7. MRAM cell according to claim 1 , wherein the magnetic element is at a temperature above the first predetermined high temperature threshold.
8. MRAM cell according to claim 1 , wherein the first and second storage magnetizations are both aligned with a magnetic field applied in a first direction for storing a first data, or wherein the first and second storage magnetizations are both aligned with a magnetic field applied in a second direction for storing a second data.
9. MRAM cell according to claim 1 , wherein the magnetic element is at a temperature below the first predetermined high temperature threshold and above the second predetermined high temperature threshold.
10. MRAM cell according to claim 1 , wherein the first storage magnetization is aligned with a magnetic field applied in a first direction and the second storage magnetization is aligned with a magnetic field applied in a second direction, for storing a third data.