Multilevel magnetic element
View Patent ↗The present disclosure concerns a multilevel magnetic element comprising a first tunnel barrier layer between a soft ferromagnetic layer having a magnetization that can be freely aligned and a first hard ferromagnetic layer having a magnetization that is fixed at a first high temperature threshold and freely alignable at a first low temperature threshold. The magnetic element further comprises a second tunnel barrier layer and a second hard ferromagnetic layer having a magnetization that is fixed at a second high temperature threshold and freely alignable at a first low temperature threshold; the soft ferromagnetic layer being comprised between the first and second tunnel barrier layers. The magnetic element disclosed herein allows for writing four distinct levels using only a single current line.
1. A multilevel magnetic element comprising: a first hard ferromagnetic layer, a soft ferromagnetic layer, a first tunnel barrier layer, a second hard ferromagnetic layer, and a second tunnel barrier layer; the soft ferromagnetic layer being between the first tunnel barrier layer and the second tunnel barrier layer.
2. A multilevel magnetic element according to claim 1 , wherein the soft ferromagnetic layer has a magnetization that can be freely aligned and the first hard ferromagnetic layer has a magnetization that is fixed at a first high temperature threshold and freely alignable at a first low temperature threshold; and wherein the second hard ferromagnetic layer has a magnetization that is fixed at a second high temperature threshold and freely alignable at a first low temperature threshold.
3. The magnetic element according to claim 2 , wherein the first high temperature threshold of the first antiferromagnetic layer is substantially equal to the second high temperature threshold of the second antiferromagnetic layer.
4. The magnetic element according to claim 1 , wherein the first tunnel barrier layers has a first junction resistance-area product that is substantially equal to a second junction resistance-area product of the second tunnel barrier layers.
5. The magnetic element according to claim 2 , wherein the first predetermined high temperature threshold of the first antiferromagnetic layer is higher than the second predetermined high temperature threshold of the second antiferromagnetic layer.
6. The magnetic element according to claim 1 , wherein the first hard ferromagnetic layer and the second hard ferromagnetic layer have different magnetic moments.
7. The magnetic element according to claim 1 , wherein said soft ferromagnetic layer has a thickness comprised between 1 nm and 10 nm.