Magnetic random access memory cells with isolating liners
View Patent ↗A manufacturing method to form a memory device includes forming a hard mask on a magnetic stack. A first magnetic stack etch is performed to form exposed magnetic layers. A liner is applied to the exposed magnetic layers to form protected magnetic layers. A second magnetic stack etch forms a magnetic random access memory (MRAM) cell, where the liner prevents shunting between the protected magnetic layers.
1. A manufacturing method to form a memory device, comprising:
forming a hard mask on a magnetic stack;
performing a first magnetic stack etch to form exposed magnetic layers;
applying a liner to the exposed magnetic layers to form protected magnetic layers; and
performing a second magnetic stack etch to form a magnetic random access memory (MRAM) cell, wherein the liner prevents shunting between the protected magnetic layers.
2. The manufacturing method of claim 1 wherein the first magnetic stack etch stops immediately after a tunnel barrier layer.
3. The manufacturing method of claim 1 wherein the first magnetic stack etch and the second magnetic stack etch are selected from a physical etch and a reactive etch.
4. The manufacturing method of claim 1 wherein the liner is applied by a technique selected from spinning and deposition.
5. The manufacturing method of claim 1 wherein the liner is between 10 and 100s of Angstroms.
6. The manufacturing method of claim 1 further comprising repeating the applying operation before a subsequent magnetic stack etch.
7. The manufacturing method of claim 1 wherein applying includes applying the liner and then etching the liner.