Magnetic random access memory cell with a dual junction for ternary content addressable memory applications
A MRAM cell including a first tunnel barrier layer between a soft ferromagnetic layer having a free magnetization and a first hard ferromagnetic layer having a first storage magnetization. A second tunnel barrier layer is between the soft ferromagnetic layer and a second hard ferromagnetic layer and has a second storage magnetization. The first storage magnetization is freely orientable at a first high predetermined temperature threshold and the second storage magnetization being freely orientable at a second predetermined high temperature threshold. The first high predetermined temperature threshold is higher than the second predetermined high temperature threshold. The MRAM cell can be used as a ternary content addressable memory (TCAM) and store up to three distinct state levels. The MRAM cell has a reduced size and can be made at low cost.
1. A method for reading a MRAM cell including a magnetic element comprising a soft ferromagnetic layer having a magnetization that can be freely aligned; a first hard ferromagnetic layer having a first storage magnetization; a first tunnel barrier layer comprised between the soft ferromagnetic layer and the a first hard ferromagnetic layer; a second hard ferromagnetic layer having a second storage magnetization; and a second tunnel barrier layer comprised between the soft ferromagnetic layer and the second hard ferromagnetic layer; the first storage magnetization being be freely orientable at a first high predetermined temperature threshold and the second storage magnetization being freely orientable at a second predetermined high temperature threshold; the first high predetermined temperature threshold being higher than the second predetermined high temperature threshold; the method comprising:
measuring an initial resistance value of the magnetic element with the stored data;
providing a first search data to the sense layer and determining the matching between the first search data and the stored data; and
providing a second search data to the sense layer and determining the matching between the second search data and the stored data.
2. The method according to claim 1 , wherein measuring the initial resistance comprises passing a read current in the magnetic element in the absence of external magnetic field.
3. The method according to claim 1 , wherein providing the first search data comprises applying the read magnetic field in a first direction and providing the second search data comprises applying the read magnetic field in a second direction; such as to orient the sense magnetization in the first and second direction, respectively.
4. The method according to claim 1 , wherein determining the matching between the first and second search data and the stored data comprises measuring a first read resistance and measuring a second read resistance by passing the read current in the magnetic element with the magnetic field being applied in the first and second direction, respectively.
5. The method according to claim 1 , wherein determining the matching further comprises comparing the measured first and second read resistance to the initial resistance value.