Magnetoresistive-based sensing circuit for two-dimensional sensing of high magnetic fields
A magnetic sensing circuit includes a circuit portion including: a main half-bridge including series-connected main tunnel magnetoresistive sensor elements TMR 1 and TMR 2 ; a first auxiliary half-bridge connected in parallel to the main half-bridge and including series-connected auxiliary tunnel magnetoresistive sensor elements TMR 3 and TMR 4 with an output voltage emerging from the connection between TMR 1 and TMR 3 and between TMR 2 and TMR 4 ; wherein a reference magnetization of the magnetoresistive sensor element TMR 1 and TMR 3 are respectively oriented substantially antiparallel with respect to a reference magnetization of the magnetoresistive sensor element TMR 2 and TMR 4 ; and wherein said first auxiliary half-bridge has a sensing axis that differs from the sensing axis of the main half bridge by an angle of about 180°/n, where n is the harmonic number to be canceled. The magnetic sensing circuit allows for sensing of external magnetic fields having high magnitude, with reduced angular error.
1. Magnetic sensing half-bridge circuit for sensing an orientation of an external magnetic field in a plane, comprising a circuit portion including:
a main half-bridge comprising series-connected main tunnel magnetoresistive sensor elements TMR 1 and TMR 2 ;
a first auxiliary half-bridge connected in parallel to the main half-bridge, said first auxiliary half-bridge comprising series-connected auxiliary tunnel magnetoresistive sensor elements TMR 3 and TMR 4 with an output voltage emerging from the connection between TMR 1 and TMR 3 and between TMR 2 and TMR 4 ;
wherein each sensor element TMR 1 , TMR 2 , TMR 3 and TMR 4 comprises a tunnel barrier spacer layer sandwiched between a ferromagnetic reference layer having a reference magnetization that is pinned in a pinning direction and a ferromagnetic sense layer having a sense magnetization that can be freely oriented;
wherein the reference magnetization of the magnetoresistive sensor element TMR 1 and TMR 3 are respectively oriented substantially antiparallel with respect to the reference magnetization of the magnetoresistive sensor element TMR 2 and TMR 4 ; and
wherein said first auxiliary half-bridge has a sensing axis that differs from the sensing axis of the main half bridge by an angle of 180°/n, where n is the harmonic number to be canceled.
2. The magnetic sensing half-bridge circuit according to claim 1 ,
wherein said first auxiliary half-bridge is configured such that its sensing axis differs from the sensing axis of the main half-bridge by an angle of 60° for 3 rd harmonics cancelling.
3. The magnetic sensing half-bridge circuit according to claim 1 ,
wherein said first auxiliary half-bridge is configured such that its sensing axis differs from the sensing axis of the main half-bridge by an angle of 36° for 5 th harmonics cancelling.
4. The magnetic sensing half-bridge circuit according to claim 1 ,
comprising a plurality of auxiliary half-bridges, each auxiliary half-bridge being connected in parallel to the main half-bridge, and
wherein each auxiliary half-bridge is configured such that its sensing axis differs from the mean sensing axis of all the others half-bridges by an angle of 180°/n.
5. The magnetic sensing circuit according to claim 4 , wherein n is different for each auxiliary half-bridge.
6. The magnetic sensing circuit according to claim 5 , wherein n is greater than 2.
7. The magnetic sensing circuit according to claim 1 ,
comprising a plurality of the circuit portion connected in parallel.
8. The magnetic sensing circuit according to claim 4 ,
comprising a plurality of the circuit portion connected in parallel,
wherein the main and auxiliary half-bridges in one of the half-bridge circuit portion are configured in a full-bridge, wherein the angle between sensing axes of the main half bridges is 180°.
9. The magnetic sensing circuit according to claim 4 ,
comprising a plurality of the circuit portion connected in parallel,
wherein the main and auxiliary half-bridges in one of the half-bridge circuit portion are configured in a full-bridge, wherein the angle between sensing axes of the main half bridges is 180°-180°/n.