Magnetic logic units configured to measure magnetic field direction

1. An apparatus, comprising:

a plurality of circuits, each of the plurality of circuits including an array of magnetic tunnel junctions arranged in a plurality of rows, wherein the magnetic tunnel junctions in each of the plurality of rows are connected in series, and the plurality of rows are connected in parallel; and

a field line configured to generate a magnetic field for configuring an operating point of each of the plurality of circuits based on a current flow through the field line, wherein:

the current flow for configuring the operating point of a first circuit included in the plurality of circuits has a first direction;

the current flow for configuring the operating point of a second circuit included in the plurality of circuits and adjacent to the first circuit has a second direction substantially opposite to the first direction, wherein the current flow establishes the operating point of each of the plurality of circuits substantially in a linear region of an input-output response curve of each of the plurality of circuits; and

a resistance of at least one of the magnetic tunnel junctions in each of the plurality of rows of the array of magnetic tunnel junctions is configured based on the magnetic field.

2. The apparatus of claim 1 , wherein the at least one of the magnetic tunnel junctions is a subset of the magnetic tunnel junctions.

3. The apparatus of claim 2 , wherein the field line is a first field line, the magnetic field is a first magnetic field, and the current flow is a first current flow, and further comprising a second field line connected in parallel with the first field line, the second field line configured to generate a second magnetic field for configuring an operating point of each of the plurality of circuits based on a second current flow through the second field line, wherein the resistance of at least one of the magnetic tunnel junctions in each of the plurality of rows of the array of magnetic tunnel junctions is configured based on the second magnetic field.

4. The apparatus of claim 1 , wherein the first circuit and the second circuit are each connected to a common ground pad disposed between the first circuit and the second circuit.

5. The apparatus of claim 1 , wherein the apparatus is configured to generate a differential signal, the differential signal being a difference between a first output signal of the first circuit and a second output signal of the second circuit, wherein a magnitude of the differential signal is increased relative to the first output signal and the second output signal.

6. The apparatus of claim 5 , wherein the apparatus is configured to generate the differential signal for suppression of common mode noise.

7. The apparatus of claim 1 , further comprising a module configured to determine an external magnetic field based on a parameter of each of the plurality of circuits, wherein the parameter of each of the plurality of circuits varies based on a combined resistance of the array of magnetic tunnel junctions, the module being implemented in at least one of a memory or a processing device.

8. The apparatus of claim 7 , wherein the combined resistance of the array of magnetic tunnel junctions is pre-configured based on a number of the magnetic tunnel junctions connected in series in each of the plurality of rows, and based on a number of the plurality of rows connected in parallel.

9. The apparatus of claim 8 , wherein the number of the plurality of rows connected in parallel exceeds the number of the magnetic tunnel junctions connected in series in each of the plurality of rows by at least a factor of five.

10. The apparatus of claim 8 , wherein the number of the plurality of rows connected in parallel is in the range from approximately 200 to approximately 2,500.

11. The apparatus of claim 7 , wherein the module is configured to determine the external magnetic field based on a differential signal, the differential signal being a difference between a first output signal of the first circuit and a second output signal of the second circuit, wherein a magnitude of the differential signal is increased relative to the first output signal and the second output signal to enhance detection of the external magnetic field.

12. The apparatus of claim 11 , wherein the apparatus is configured to generate the differential signal for suppression of common mode noise.

13. The apparatus of claim 1 , wherein each of the plurality of circuits has a distinct angular orientation.

14. The apparatus of claim 13 , wherein the field line includes a plurality of portions, each of the plurality of portions disposed adjacent to a corresponding one of the plurality of circuits, and each of the plurality of portions being configured such that the current flow through each of the plurality of portions has an angular orientation corresponding to the distinct angular orientation of the corresponding one of the plurality of circuits.

15. The apparatus of claim 14 , wherein the angular orientations of the plurality of portions of the field line are substantially equally spaced.

16. The apparatus of claim 14 , wherein:

the plurality of portions of the field line includes N portions, wherein N is at least three; and

the angular orientations of the plurality of portions of the field line are substantially equally spaced by an angle of 360 degrees divided by N.

17. The apparatus of claim 1 , wherein the field line is serpentine.

18. The apparatus of claim 1 , wherein the field line is a single field line.

19. The apparatus of claim 1 , wherein the operating point of each of the plurality of circuits is configured to substantially maximize gain of the corresponding one of the plurality of circuits.

20. The apparatus of claim 1 , wherein the operating point of each of the plurality of circuits is configured to maintain substantially linear operation of the corresponding one of the plurality of circuits.

21. The apparatus of claim 1 , wherein:

each magnetic tunnel junction in the array of magnetic tunnel junctions includes a storage layer having a storage magnetization and a sense layer having a sense magnetization;

the magnetic field is a first magnetic field; and

the field line is configured to generate a second magnetic field for configuring the storage magnetization of each magnetic tunnel junction in the array of magnetic tunnel junctions.