Magnetoresistive sensor element for sensing a two-dimensional magnetic field with low high-field error
A magnetoresistive element for a two-dimensional magnetic field sensor, including: a ferromagnetic reference layer having a fixed reference magnetization, a ferromagnetic sense layer having a sense magnetization that can be freely oriented relative to the reference magnetization in the presence of an external magnetic field, and a tunnel barrier layer between the reference and sense ferromagnetic layers; the reference layer including a reference coupling layer between a reference pinned layer and a reference coupled layer; the reference coupled layer including a first coupled sublayer in contact with the reference coupling layer, a second coupled sublayer, a third coupled sublayer and a insert layer between the second and third coupled sublayers; the insert layer comprising a transition metal and has a thickness between about 0.1 and about 0.5 nm, and the thickness of the reference coupled layer is between about 1 nm and about 5 nm.
1. A magnetoresistive element for a two-dimensional magnetic field sensor, comprising:
a ferromagnetic reference layer having a fixed reference magnetization, a ferromagnetic sense layer having a sense magnetization that can be freely oriented relative to the reference magnetization in the presence of an external magnetic field, and a tunnel barrier layer between the reference and sense ferromagnetic layers;
the reference layer comprising a reference coupling layer between a reference pinned layer and a reference coupled layer;
the reference coupled layer comprises a first coupled sublayer in contact with the reference coupling layer, a second coupled sublayer in contact with the first coupled sublayer, a third coupled sublayer and an insert layer between the second and third coupled sublayers, the insert layer providing a ferromagnetic exchange coupling between the second and third coupled sublayers; and
the insert layer has a thickness of 0.2 nm;
wherein the reference pinned layer comprises a CoFe alloy and has a thickness of 2 nm, the tunnel barrier layer comprises Mg;
wherein the insert layer comprises Ta, the first coupled sublayer is made of a CoFe alloy, 0.5 nm in thickness, the second coupled sublayer is made of a CoFeB alloy and has a thickness of 0.75 nm, and the third coupled sublayer is made of a CoFeB alloy and has a thickness between 0.45 nm and 0.95 nm;
wherein the magnetoresistive element is thermally treated at 310° C. during 90 min under an applied magnetic field of about 1T.
2. The magnetoresistive element, according to claim 1 , wherein the insert layer is amorphous or quasi-amorphous or nanocrystalline.
3. A magnetic field sensor for sensing a two-dimensional magnetic field, comprising a magnetoresistive element, comprising:
a ferromagnetic reference layer having a fixed reference magnetization, a ferromagnetic sense layer having a sense magnetization that can be freely oriented relative to the reference magnetization in the presence of an external magnetic field, and a tunnel barrier layer between the reference and sense ferromagnetic layers;
the reference layer comprising a reference coupling layer between a reference pinned layer and a reference coupled layer;
the reference coupled layer comprises a first coupled sublayer in contact with the reference coupling layer, a second coupled sublayer in contact with the first coupled sublayer, a third coupled sublayer and an insert layer between the second and third coupled sublayers, the insert layer providing a ferromagnetic exchange coupling between the second and third coupled sublayers; and
the insert layer has a thickness of 0.2 nm;
the reference pinned layer comprises a CoFe alloy and has a thickness of 2 nm, the tunnel barrier layer comprises Mg;
wherein the insert layer comprises Ta, the first coupled sublayer is made of a CoFe alloy, 0.5 nm in thickness, the second coupled sublayer is made of a CoFeB alloy and has a thickness of 0.75 nm, and the third coupled sublayer is made of a CoFeB alloy and has a thickness between 0.45 nm and 0.95 nm;
wherein the magnetoresistive element is thermally treated at 310° C. during 90 min under an applied magnetic field of about 1T.