Gate structure and method of making the same
View Patent ↗A method of making a gate structure includes the following steps. First, a gate is formed. Then, a first silicon oxide layer, a silicon nitride layer, and a second silicon oxide layer are formed to cover the gate from bottom to top. Later, a dry etching is performed to etch the second silicon oxide layer. After that, a wet etching is performed to etch the silicon nitride layer and the first silicon oxide layer. The aforesaid wet etching is performed by utilizing an RCA cleaning solution. Furthermore, the silicon nitride layer is formed by the SINGEN process. Therefore, the first and second silicon oxide layer and the silicon nitride layer can be etched together by the RCA cleaning solution.
1. A method of forming a gate structure, comprising:
forming a gate;
forming a first silicon oxide layer, a silicon nitride layer and a second silicon oxide layer covering the gate from bottom to top;
performing a dry etching process to etch the second silicon oxide layer; and
performing a wet etching process to etch the silicon nitride and the first silicon oxide layer.
2. The method of claim 1 , wherein the first silicon oxide layer, the silicon nitride layer and the second silicon oxide layer form an oxide-nitride-oxide (ONO) stack layer.
3. The method of claim 1 , wherein the silicon nitride layer substantially cannot be etched by phosphoric acid.
4. The method of claim 1 , wherein the etching solution is an RCA cleaning solution.
5. The method of claim 4 , wherein the RCA cleaning solution comprises NH 4 OH and H 2 O 2 .
6. The method of claim 1 , wherein the dry etching process is stopped when the silicon nitride layer is exposed.
7. The method of claim 1 , wherein the first silicon oxide layer, the silicon nitride layer and the second silicon oxide layer are etched during the wet etching process until the silicon nitride layer on the top of the gate is removed completely and part of the first silicon oxide layer is removed, and the first silicon oxide layer, the silicon nitride layer and the second silicon oxide layer after etching together form a spacer.
8. The method of claim 1 , wherein the gate structure can be applied to a transfer transistor, a reset transistor, a source follower transistor, or a select transistor.
9. A gate structure, comprising:
a gate; and
a spacer positioned at a sidewall of the gate, the spacer comprising an oxide-nitride-oxide (ONO) stack layer formed by a first silicon oxide layer, a silicon nitride layer and a second silicon oxide layer, the silicon nitride layer unetched by phosphoric acid so that an undercut does not occur in the silicon nitride layer.
10. The gate structure of claim 9 , wherein the first silicon oxide layer covers the sidewall of the gate completely.
11. The gate structure of claim 9 , wherein the gate further comprises a dielectric layer positioned on a substrate.
12. The gate structure of claim 9 , wherein the thickness of the first silicon oxide layer is 100 angstroms.