Semiconductor device and method of manufacturing the same
View Patent ↗Provided are a semiconductor device and a method of manufacturing the same. The semiconductor device comprises a gate electrode on a semiconductor substrate having a device isolation region, a first drain spacer on one side of the gate electrode, a second drain spacer next to the first drain spacer, a first source spacer on an opposite side of the gate electrode and a portion of the semiconductor substrate where a source region is to be formed, a second source spacer on side and top surfaces of the first source spacer, and LDDs adjacent to the first drain spacer and below the first source spacers, wherein the LDD below the first source spacer is thinner than the LDD adjacent to the first drain spacer.
1. A method of manufacturing a semiconductor device, the method comprising:
forming a gate electrode on a semiconductor substrate having a device isolation region, wherein forming the gate electrode comprises forming an insulation layer on the semiconductor substrate, forming a polysilicon layer on the insulation layer, forming a hard mask layer on the polysilicon layer, and patterning the insulation layer, the polysilicon layer, and the hard mask layer to form a gate insulation layer, the gate electrode, and a hard mask, respectively;
forming a first drain spacer on sidewalls of the gate insulation layer, the gate electrode, and the hard mask on one side of the gate electrode and forming a first spacer layer on an opposite side of the gate electrode and on the semiconductor substrate where a source region is to be formed;
forming an asymmetric Lightly Doped Drain (LDD) region by implanting ions into the exposed semiconductor substrate next to the first drain spacer and implanting ions through the first spacer layer; and
forming a second drain spacer next to the first drain spacer, partially removing the first spacer layer on the semiconductor substrate where the source region is to be formed to form a first source spacer on sidewalls of the gate insulation layer, the gate electrode, and the hard mask, and forming a second source spacer on side and top surfaces of the first source spacer.
2. The method according to claim 1 , further comprising:
forming a source region in the semiconductor substrate next to the second source spacer and forming a drain region in the semiconductor substrate next to the second drain spacer through an ion implantation process.
3. The method according to claim 1 , wherein:
the semiconductor substrate comprises an N-type Metal Oxide Semiconductor (NMOS) region and a P-type MOS (PMOS) region on opposite sides of the device isolation region; and
the gate electrode, the first drain spacer, the second drain spacer, the first source spacer, the second source spacer, and the LDD region are formed in each of the NMOS region and the PMOS region.
4. The method according to claim 1 , wherein forming the first drain spacer and the first spacer layer comprises:
forming the first spacer layer on the entire semiconductor substrate including the gate insulation layer, the gate electrode, and the hard mask; and
forming the first drain spacer on the one side of the gate insulation layer, the gate electrode, and the hard mask by etching an exposed region of the first spacer layer and masking the first spacer layer on the opposite side of the gate insulation layer, the gate electrode, and the hard mask, and on a portion of the semiconductor substrate where the source region is to be formed.
5. The method according to claim 1 , wherein forming the second source spacer comprises:
forming a second spacer layer on the semiconductor substrate including the first drain spacer, the first spacer layer, the hard mask, and the LDD region; and
etching the second spacer layer to form the second drain spacer near the first drain spacer and form the second source spacer on side and top surfaces of the first spacer, and etching exposed portions of the first spacer layer to form the first source spacer.
6. The method according to claim 1 , wherein forming the polysilicon layer comprises doping the polysilicon layer by implanting ions including at least one of As, Sb, B, and In.
7. The method according to claim 4 , wherein the first spacer layer is etched by a dry etching technique.
8. The method according to claim 5 , wherein at least one of the first spacer layer and the second spacer layer comprises SiN.
9. The method according to claim 5 , wherein the etching process comprises a blanket etching process using a dry etching technique.
10. The method according to claim 4 , wherein forming the first spacer layer comprises a Low Pressure Chemical Vapor Deposition (LP-CVD) technique.
11. The method according to claim 1 , wherein forming the first spacer layer comprises forming a portion of the first spacer layer on an uppermost surface of the LDD region and the sidewalls of the gate insulation layer, the gate electrode and the hard mask of the NMOS and the PMOS regions, respectively.
12. The method according to claim 1 , wherein forming the asymmetric LDD regions comprises forming a first LDD region at a first depth in the NMOS region, and forming a second LDD region at a second depth greater than the first depth in the PMOS region.