Organic light emitting device and method of fabricating the same
An organic light emitting device (OLED) and a method of fabricating the same are provided, wherein the OLED includes a thin film transistor having a gate electrode, and source and drain electrodes on a substrate; a triple-layered pixel electrode connected to one of the source and drain electrodes through a via-contact hole formed in an insulating layer on the substrate, and having a lower pixel electrode, a reflective layer pattern and an upper pixel electrode; an organic layer disposed on the upper pixel electrode and having at least an emission layer; and an opposite electrode disposed on the organic layer.
1. A method of fabricating an organic light emitting device, comprising:
forming a thin film transistor having a gate electrode and source and drain electrodes on a substrate;
forming an insulating layer on an entire surface of the thin film transistor;
etching the insulating layer using photolithography and etching processes to form a via-contact hole that exposes one of the source and drain electrodes;
forming a stacked structure comprising a layer for a lower pixel electrode, a reflective layer, and a layer for an upper pixel electrode, on the entire surface of the resultant structure;
etching the stacked structure to form a triple-layered pixel electrode connected with one of the source and drain electrodes through the via-contact hole, and having a lower pixel electrode, a reflective layer pattern and an upper pixel electrode;
forming an organic layer having at least an emission layer on the upper pixel electrode; and
forming an opposite electrode on the organic layer, wherein,
the lower pixel electrode is approximately 100 Å to 1000 Å thick,
the upper pixel electrode is approximately 20 to 100 Å thick,
the lower pixel electrode is thicker than the upper pixel electrode,
the reflective layer pattern is disposed between and is directly contacting the lower pixel electrode and the upper pixel electrode,
wherein the insulating layer is formed in a stacked structure comprising an inorganic insulating layer and an organic insulating layer, and
wherein the reflective layer pattern is formed having a thickness of approximately 500 to 3000 Å.
2. The method of claim 1 , wherein the insulating layer is formed in a stacked structure comprising a passivation layer and a planarization layer.
3. The method of one of claim 1 , wherein the via-contact is formed by twice performing the photolithography and etching processes.
4. The method of claim 1 , wherein the reflective layer pattern is formed of one selected from a group consisting of Ag, Pt, and Pd.
5. The method of claim 4 , wherein the reflective layer pattern comprises Ag.
6. The method of claim 1 , wherein the opposite electrode is formed of a transparent electrode.