Method for forming organic semiconductor thin film and method of manufacturing thin-film semiconductor device
A method for forming an organic semiconductor thin film includes the steps of forming a mixed ink layer on a principal plane of a printing plate, the mixed ink layer including a mixture of an organic semiconductor material incapable of transcription and an organic material capable of transcription from the printing plate to a substrate in ink form dissolved in a solvent, and forming an organic semiconductor thin film by transcribing the mixed ink layer onto the substrate by transcribing the mixed ink layer on the printing plate to the substrate.
1. A method for forming an organic semiconductor thin film comprising the steps of:
forming a mixed ink layer on a principal plane of a printing plate, the mixed ink layer including a mixture of an organic semiconductor material incapable of transcription and an organic material capable of transcription from the printing plate to a substrate in ink form dissolved in a solvent, and
forming an organic semiconductor thin film by transcribing the mixed ink layer onto the substrate by transcribing the mixed ink layer on the printing plate to the substrate,
wherein,
the mixed ink layer on the printing plate undergoes phase separation on the printing plate with the layer containing organic material sandwiched between layers containing organic semiconductor material, and
at least the uppermost layer containing organic semiconductor material in the mixed ink layer formed on the printing plate is transcribed onto the substrate.
2. The method for forming an organic semiconductor thin film according to claim 1 , wherein the relationship between a surface energy α of the printing plate, a surface energy β1 of the organic semiconductor material and a surface energy β2 of the organic material is expressed as α>β1 and α<β2.
3. The method for forming an organic semiconductor thin film according to claim 2 , wherein at least one of the organic semiconductor material and the organic material is a high polymer material.
4. The method for forming an organic semiconductor thin film according to any one of claims 1 2 and 3 , wherein the organic material capable of transcription is a semiconductor material.
5. The method for forming an organic semiconductor thin film according to any one of claims 1 2 and 3 , wherein the organic material capable of transcription is an insulating material.
6. The method for forming an organic semiconductor thin film according to claim 1 , wherein at least one of the organic semiconductor material and the organic material is a high polymer material.
7. A method for manufacturing a thin-film semiconductor comprising the steps of:
forming a mixed ink layer on a principal plane of a printing plate, the mixed ink layer including a mixture of an organic semiconductor material incapable of transcription and an organic material capable of transcription from a printing plate to a substrate in ink form dissolved in a solvent, and
forming an organic semiconductor thin film by transcribing the mixed ink layer onto the substrate by transcribing the mixed ink layer on the printing plate to the substrate,
wherein,
the mixed ink layer on the printing plate undergoes phase separation on the printing plate with the layer containing organic material sandwiched between layers containing organic semiconductor material, and
at least the uppermost layer containing organic semiconductor material in the mixed ink layer formed on the printing plate is transcribed onto the substrate.
8. The method for manufacturing a thin-film semiconductor device according to claim 7 , wherein the relationship between a surface energy α of the printing plate, a surface energy β1 of the organic semiconductor material and a surface energy β2 of the organic material is expressed as α>β1 and α<β2.
9. The method for manufacturing a thin-film semiconductor device according to claim 7 or 8 , wherein a source electrode and a drain electrode are formed on the substrate, and the organic semiconductor thin film is transcribed onto the substrate between the source electrode and the drain electrode.
10. The method for manufacturing a thin-film semiconductor device according to claim 9 , wherein a gate insulating film is formed on a gate electrode on the surface of the substrate, and the source electrode and the drain electrode are formed on the gate insulating film.