Dry etching method
View Patent ↗After etching a polysilicon film, when a protective film made of a carbon polymer is formed on a sidewall of the polysilicon film using plasma containing carbons, a metallic material as a lower film is etched using plasma containing a halogen gas under an etching condition in which volatility is improved due to the rise in a wafer temperature or the low pressure of a processing pressure, thereby preventing a side etching and unevenness of a sidewall of the polysilicon film. Further, by using the protective film made of a carbon polymer, metallic substances scattered at the time of etching the metallic material are not directly attached to the polysilicon film, but can be simply removed along with the protective film made of a carbon polymer in an asking step.
1. A dry etching method of a metal/high dielectric gate structure formed on a semiconductor substrate, comprising:
a step of etching a polysilicon film;
a step of forming a protective film made of a carbon polymer on a sidewall of the polysilicon film by plasma containing carbons;
a step of performing an etching process on a metallic material as a lower film of the polysilicon film by plasma containing a halogen gas; and
an ashing step of removing the protective film made of a carbon polymer along with a scattered metallic material after the etching process.
2. The dry etching method according to claim 1 , wherein:
in a step of forming the protective film made of a carbon polymer, CHF 3 with a flow rate of 100 ml/min is used as an etching gas, a pressure within a processing room of an etching device is kept at 0.3 Pa, and a wafer temperature is kept at 40° C.
3. The dry etching method according to claim 1 , wherein:
in a step of forming the protective film made of a carbon polymer, a gas containing at least any one of CHF 3 , CH 4 , C 2 H 6 , CH 2 F 2 , CF 4 , C 4 F 8 , C 3 F 6 , C 3 F 8 , CH 3 OH, and CO; a mixed gas obtained by mixing two or more gases from among the above-described gases; or a mixed gas obtained by mixing an addition gas of any one of Ar, He, O 2 , N 2 , Hbr, and Cl 2 with a gas containing at least one gas from among the above-described gases is used as an etching gas.
4. The dry etching method according to claim 1 , wherein:
after the etching process, the ashing step is performed in an ashing processing room within the etching device, or by another ashing device provided separately from the etching device.