Method of manufacturing solar cell
A method of manufacturing a solar cell having a texture on a surface of a silicon substrate includes first forming a porous layer on the surface of the silicon substrate by dipping the silicon substrate into a mixed aqueous solution of oxidizing reagent containing metal ions and hydrofluoric acid. Second, a texture is formed by etching the surface of the silicon substrate after the porous layer is formed, by dipping the silicon substrate into a mixed acid mainly containing hydrofluoric acid and nitric acid.
1. A method of manufacturing a solar cell having a texture on a surface of a silicon substrate, the method comprising:
a first forming including forming a porous layer on the surface of the silicon substrate by dipping the silicon substrate into a mixed aqueous solution of oxidizing reagent containing metal ions and hydrofluoric acid; and
a second forming including forming a texture by etching the surface of the silicon substrate, to an extent that a reflectance reduction effect is not lost and a metal at a bottom of pores of the porous layer is removed, after the first forming by dipping the silicon substrate into a mixed acid mainly containing hydrofluoric acid and nitric acid.
2. The method according to claim 1 , wherein the mixed acid consists of 60% nitric acid and 50% hydrofluoric acid with a content ratio of 6:1 or more.
3. The method according to claim 1 , further comprising etching the silicon substrate after the second forming using an alkali chemical.
4. The method according to claim 1 , wherein the second forming further includes etching the surface of the silicon substrate after the first forming while circulating or stirring the mixed acid.
5. The method according to claim 1 , wherein at least one of the first forming and the second forming further includes, when the silicon substrate is set horizontally or is dipped by horizontally conveying the silicon substrate, setting a surface facing upward as a light-receiving surface of the solar cell.
6. The method according to claim 1 , wherein a metal ion concentration of the mixed aqueous solution is equal to or higher than 1 E-4M and lower than 8E-4M.