Electronic component module and method for production thereof

1. An electronic component module comprising:

at least one ceramic circuit carrier;

a cooling device including at least one heat sink; and

a bonding region arranged between the ceramic circuit carrier and the cooling device adapted for bonding the circuit carrier to the cooling device, which bonding region comprises a bonding layer comprised of metal and a eutectic region arranged between the bonding layer and the cooling device.

2. The electronic component module as claimed in claim 1 , wherein the bonding region is formed over the full surface area between the circuit carrier and the cooling device.

3. The electronic component module as claimed in claim 1 , wherein the metallic bonding layer is applied at least to certain regions on the circuit carrier as a metal paste before the individual layers of the circuit carrier are joined together with the cooling device.

4. The electronic component module as claimed in claim 1 , wherein the circuit carrier is formed as a ceramic LTCC circuit carrier.

5. The electronic component module as claimed in claim 1 , wherein the circuit carrier is formed as a ceramic LTCC circuit carrier and the eutectic region is adapted for creating a reactive bond with the cooling device during the LTCC process for bonding the individual layers of the ceramic circuit carrier.

6. The electronic component module as claimed in claim 1 wherein the heat sink extends at least on one side laterally beyond the extent of the circuit carrier.

7. The electronic component module as claimed in claim 1 , wherein the bond between the circuit carrier, the bonding region and the cooling device is formed by a sintering process at a temperature between 840° C. and 930° C.

8. A method for producing an electronic component module, comprising:

forming at least one multilayered ceramic circuit carrier; and

bonding the at least one multilayered ceramic circuit carrier to a cooling device with at least one heat sink;

wherein the circuit carrier and the cooling device are bonded by a bonding region, which bonding region is adapted for bonding to a ceramic material and is formed by a bonding layer formed at least in part from metal and a eutectic region formed between the bonding layer and the cooling device.

9. The method as claimed in claim 8 , wherein a metal-containing paste is applied to at least one of the circuit carrier and the cooling device before bonding of individual layers of the circuit carriers, and the bonding layer is formed from said paste during bonding of the individual layers of the circuit carrier.

10. The method as claimed in claim 8 , wherein the eutectic region is formed during bonding of the circuit carrier, the bonding layer and the cooling device.

11. The method as claimed in claim 10 , wherein the eutectic region is formed by a material bond with a melting temperature lower than a process temperature at which the circuit carrier, the bonding layer and the cooling device are bonded to one another.

12. The method as claimed in claim 10 , wherein the circuit carrier the bonding layer and the cooling device are bonded by sintering at a temperature between 840° C. and 930° C.

13. The method as claimed in claim 8 , wherein the circuit carrier is formed as a ceramic LTCC circuit carrier and the eutectic region is produced between the bonding layer and the cooling device for creating a reactive bond with the cooling device during the LTCC process for bonding the individual layers of the ceramic circuit carrier.

14. The method as claimed in claim 10 , wherein the bonding layer is formed at least in part from glass, is applied by screen printing, and is subsequently thermally treated.