Semiconductor device and method for manufacturing the same
A substrate ( 1 ) and a semiconductor chip ( 5 ) are connected by means of flip-chip interconnection. Around connecting pads ( 3 ) of the substrate ( 1 ) and input/output terminals ( 10 ) of the semiconductor chip ( 5 ), an underfill material ( 7 ) is injected. The underfill material ( 7 ) is a composite material of filler and resin in which the maximum particle diameter of the filler is 5 μm or below and whose filler content is 40 to 60 wt %. Also, a first main surface of the substrate ( 1 ), which is not covered with the underfill material ( 7 ), and the side surfaces of the semiconductor chip ( 5 ) are encapsulated with a molding material ( 8 ). The molding material ( 8 ) is a composite material of filler and resin whose filler content is over 75 wt % and in which the glass transition temperature of the resin is over 180° C. An integrated body of the substrate ( 1 ) and the semiconductor chip ( 5 ), which are covered with the molding material ( 8 ), is thinned from above and below.
1. A semiconductor device comprising:
a substrate having connecting pads which are formed on a first main surface thereof and input/output pads which are formed on a second main surface thereof, the input/output pads being connected to the connecting pads;
a semiconductor chip disposed to oppose the first main surface of the substrate, input/output terminals thereof being connected to the connecting pads;
an underfill material that is injected into a space between the substrate and the semiconductor chip;
a molding material that encapsulates the first main surface of the substrate, which is not covered with the underfill material, and side surfaces of the semiconductor chip;
a plurality of penetrating electrodes that penetrate the substrate;
a capacitor that is disposed between the substrate and the semiconductor chip,
wherein each of the penetrating electrodes is aligned with each of the input/output terminals so as to oppose the input/output terminals.
2. The semiconductor device according to claim 1 ,
wherein the semiconductor chip is disposed such that a first main surface thereof, on which a circuit is formed, opposes the first main surface of the substrate.
3. The semiconductor device according to claim 1 ,
wherein the underfill material is a composite material of filler and resin in which the maximum particle diameter of the filler is 5 μm or below and whose filler content is 40 to 60 wt %; and
the molding material is a composite material of filler and resin whose filler content is over 75 wt % and in which the glass transition temperature of the resin is over 180° C.
4. A semiconductor device according to claim 1 ,
wherein each one of the penetrating electrodes is aligned with and electrically connected to each one of the input/output pads.
5. A semiconductor device according to claim 4 ,
wherein the connecting pads are disposed on the capacitor,
wherein the input/output terminals of the semiconductor chip are flip-chip bonded to the connecting pads on the capacitor via bumps.
6. A semiconductor device according to claim 5 ,
wherein the capacitor comprises a first connecting pad, a second connecting pad, a first electrode and a second electrode,
wherein the first and the second electrode are electrically connected to the first and the second connecting pad, respectively,
wherein the first connecting pad being connected to a grounding terminal of the semiconductor chip and the second connecting pad being connected to a power supply terminal of the semiconductor chip.
7. The semiconductor device according to claim 6 , wherein the semiconductor chip is disposed such that a first main surface thereof, on which a circuit is formed, opposes the first main surface of the substrate.
8. The semiconductor device according to claim 6 , wherein the underfill material is a composite material of filler and resin in which the maximum particle diameter of the filler is 5 micro meter or below and whose filler content is 40 to 60 weight percent; and the molding material is a composite material of filler and resin whose filler content is over 75 weight percent and in which the glass transition temperature of the resin is over 180 Celsius.