Parallel fabrication of nanogaps and devices thereof
Disclosed are devices comprising multiple nanogaps having a separation of less than about 5 nm. Also disclosed are methods for fabricating these devices.
1. A method for fabricating a plurality of nanogaps, comprising:
controllably applying a voltage simultaneously across a plurality of constrictions residing in a first conductive material comprising a plurality of ions,
the constrictions being placed in parallel electrical communication with one another by a second conductive material,
the electrical resistance between neighboring constrictions being less than the electrical resistance across a constriction,
the controllably applied voltage giving rise to heating within the constrictions, thereby forming the plurality of nanogaps simultaneously,
the heating within the constrictions giving rise to the essentially simultaneous formation of the plurality of nanogaps upon application of the voltage, each nanogap comprising two opposing faces, each face of the opposing electrodes being essentially crystalline, and
the mean separation distance between the opposing faces of the nanogaps is in a range of from about 0.1 nm less than 5 nm.
2. The method of claim 1 , wherein the faces of the nanogaps are essentially crystalline.
3. The method of claim 1 , wherein the first conductive material comprises a substance nonreactive to air, a noble metal, an oxide conductor, a high-superconducting temperature superconductor, a colossal magnetic resistive oxide, an inert alloy, graphene, a multi-walled nanotube, or any combination thereof.
4. The method of claim 1 , wherein the second conductive material comprises chromium, aluminum, or a combination thereof.
5. The method of claim 3 , wherein the noble metal comprises gold, platinum, palladium, rhodium, ruthenium, iridium, osmium or any combination thereof.
6. The method of claim 1 , wherein a constriction comprises at least one narrowed region.
7. The method of claim 6 , wherein the narrowed regions of the constrictions are separated from one another by an average distance of at least about 50 nm.
8. The method of claim 6 , wherein the at least one narrowed region comprises a characteristic width of less than about 100 nm.
9. The method of claim 1 , wherein two or more constrictions are oriented essentially parallel to one another.
10. The method of claim 1 , wherein the voltage is controllably applied at about ambient temperature.
11. The method of claim 1 , wherein the applied voltage is in the range of from about 0.2 V to about 2 V per constriction.
12. The method of claim 1 , wherein controllably applying the voltage comprises increasing the applied voltage until the conductance value of the conductive material changes.
13. The method of claim 1 , wherein the heating gives rise to electromigration of at least a portion of the ions of the conductive material residing at the narrowed regions of the constrictions.
14. The method of claim 1 , wherein at least a portion of the second conductive material placing two or more nanogaps in electrical communication is removed, transformed, or both.
15. A device produced by the method of claim 14 , wherein the separation distance between opposing electrodes of any nanogap varies by less than 0.3 nm from the mean opposing electrode separation of the plurality of nanogaps.
16. The method of claim 1 , wherein at least two nanogaps form essentially simultaneously following the application of the applied voltage.
17. The method of claim 1 , wherein the separation distance between opposing faces of any one nanogaps varies by less than 0.3 nm from the mean separation distance of the plurality of nanogaps.
18. A device, comprising:
a plurality of nanogaps formed by simultaneous resistive heating in a first conductive material,
the nanogaps comprising opposing electrodes,
the opposing electrodes being separated by less than about 5 nm,
the opposing electrodes comprising faces, and
the faces of the opposing electrodes being essentially crystalline;
wherein the separation distance between opposing electrodes of any nanogap varies by less than 0.3 nm from the mean opposing electrode separation of the plurality of nanogaps.
19. The device of claim 18 , wherein the first conductive material comprises a substance nonreactive to air, a noble metal, an oxide conductor, a high-Tc superconductor, a colossal magnetic resistive oxide, an inert alloy, graphene, a multi-walled nanotube, or any combination thereof.
20. The device of claim 18 , wherein a second conducting material places two or more nanogaps in electrical communication with one another.
21. The device of claim 18 , further comprising one or more molecules residing within one or more nanogaps.
22. The device of claim 18 , wherein one or more of the nanogaps is individually electrically addressable.