PHOTOVOLTAIC MODULE AND ENERGY OR LIGHT PRODUCTION MODULES
The invention relates to a module ( 1 ) for generating light or energy, comprising at least one light or energy generator including at least one semiconductor cell ( 2 ), the area of which is greater than 0.01 m 2 , said cell being placed in a sealed enclosure maintained at a pressure below atmospheric pressure, said enclosure having a glass front side ( 3 ), a metal or metal alloy rear side ( 4 ) optionally coated on one or other of its faces, a peripheral sealing gasket ( 5 ), and electrical connectors ( 6 ) that are not fastened to said cells ( 2 ) or to said front side ( 3 ) and rear side ( 4 ), said rear side ( 4 ) being electrically isolated from said generators, characterized in that said rear side ( 4 ) has a metal or metal alloy thickness of less than 1 mm. The invention relates more particularly to photovoltaic modules and to LED or OLED illumination modules.
1 . A module for generating light or energy, comprising at least one light or energy generator comprising at least one semiconductor cell, the area of which is greater than 0.01 m 2 , said cell being placed in a sealed enclosure maintained at a pressure below atmospheric pressure, said enclosure having a glass front side, a metal or metal alloy rear side optionally coated on one or other of its faces, a peripheral sealing gasket, and electrical connectors that are not fastened to said cells or to said front side and rear side, said rear side being electrically isolated from said generators, wherein said rear side has a metal or metal alloy thickness of less than 1 mm.
2 . The module according to claim 1 , wherein said rear side has a metal or metal alloy thickness of 0.3 mm or less and an expansion coefficient a RS between 0 and 100° C. wherein the difference in absolute value between said coefficient and the expansion coefficient α SC of said semiconductor between 0 and 100° C. is given by:
|α RS −α SC |≦15×10 −6 K −1 .
3 . The module according to claim 1 , wherein said rear side has an expansion coefficient α RS between 0 and 100° C. wherein the difference in absolute value between said coefficient and the expansion coefficient α SC of said semiconductor between 0 and 100° C. is given by:
|α RS −α SC |>5×10 −6 K −1 ,
said rear side having a metal or metal alloy thickness of 0.3 mm or less and being shaped in the zones located between said semiconductor cells, wherein said rear side does not come into contact with the edges of said semiconductor cells during operation of the module.
4 . The module according to claim 1 , wherein said rear side has a metal or metal alloy thickness of greater than 0.3 mm and an expansion coefficient α RS between 0 and 100° C. such that the difference in absolute value between said coefficient and the expansion coefficient α SC of the semiconductor is given by:
|α RS −α SC |≦4.5×10 −6 K −1 .
5 . The module according to claim 1 , wherein said rear side is isolated from said cells by an insulating coating of a non-conducting polymer.
6 . The module according to claim 5 , wherein said coating comprises electrically insulating but thermally conducting compounds capable of extracting heat from said module.
7 . The module according to claim 1 , wherein the module is a photovoltaic module.
8 . The photovoltaic module according to claim 7 , wherein said semiconductor is silicon and said rear side has a thickness of 0.3 mm or less and is an iron-nickel alloy comprising 34 to 42% nickel, with or without a corrosion protection coating.
9 . The photovoltaic module according to claim 7 , wherein said semiconductor is silicon, and said rear side has a thickness of 0.3 mm or less, is F18MT stainless steel and is shaped in the zones between the semiconductor cells, wherein the rear side does not come into contact with the edges of these cells.
10 . The photovoltaic module in according to claim 7 , wherein said rear side has a thickness greater than 0.3 mm, is an N485 iron-nickel alloy or F18MT stainless steel and is shaped in the zones between the semiconductor cells, wherein the rear side does not come into contact with the edges of these cells.
11 . The photovoltaic module according to claim 7 , wherein said rear side has a thickness greater than 0.3 mm, is galvanized carbon steel and is shaped in the zones between the semiconductor cells, wherein the rear side does not come into contact with the edges of these cells.
12 . The module according to claim 1 , wherein the module is a display screen.
13 . The module according to claim 1 , wherein the module is an LED or OLED illumination module.