Method of manufacturing semiconductor device in which functional portion of element is exposed

1. A method of manufacturing a semiconductor device comprising:

forming a first resin layer on a wafer having a functional portion provided therein;

patterning said first resin layer into a predetermined shape and forming a first resin portion on said functional portion or around said functional portion;

dividing said wafer into elements;

mounting said elements on an upper surface of a base;

bringing a molding surface of a sealing mold into pressure contact with an upper surface of said first resin portion and a lower surface of said base, and injecting a second resin into a gap portion around said first resin portion among said gap portions surrounded by said molding surface of said sealing mold to form a second resin layer around said first resin portion; and

removing said first resin portion to expose a portion of said element to the outside,

wherein in said step of forming said second resin layer, the upper surface of said first resin portion is flush with the upper surface of said second resin layer, or the upper surface of said first resin portion is higher than that of said second resin layer, and

wherein the upper surface of said first resin portion is higher than that of said second resin layer in the range of equal to greater than 0 mm and equal to or less than 0.05 mm.

2. The method of manufacturing a semiconductor device according to claim 1 , wherein said step of exposing a portion of said element to the outside comprises immersing said first resin portion into a remover to remove said first resin portion using an adhesive tape.

3. The method of manufacturing a semiconductor device according to claim 1 , wherein a first resin used for said first resin portion is any one of a light-curable resin, a thermosetting resin, or a photothermosetting resin.

4. The method of manufacturing a semiconductor device according to claim 1 , wherein the elastic modulus of a cured first resin used for said first resin portion is equal to or less than 6 GPa at a temperature of 20° C and equal to or less than 3 GPa at a temperature of 200° C.

5. The method of manufacturing a semiconductor device according to claim 1 , wherein the elastic modulus of a cure first resin used for said first resin portion is equal to or greater than 1 GPa at a temperature of 20° C and equal to or greater than 10 MPa at a temperature of 200° C.

6. The method of manufacturing a semiconductor device according to claim 1 , wherein the thickness of said first resin portion is equal to or greater than 0.1 mm.

7. The method of manufacturing a semiconductor device according to claim 1 , wherein the thickness of said first resin portion is equal to or less than 0.15 mm.

8. The method of manufacturing a semiconductor device according to claim 1 , wherein said first resin layer is made using low viscosity resin.

9. The method of manufacturing a semiconductor device according to claim 1 , wherein said step of forming said first resin portion comprises:

forming said first resin layer as a film on said wafer; and

patterning said film-shaped first resin layer into a predetermined shape to form a first resin film on said functional portion or around said functional portion.

10. The method of manufacturing a semiconductor device according to claim 1 , further comprising:

dividing said base into said elements after said step of removing said first resin portion.

11. The method of manufacturing a semiconductor device according to claim 1 , wherein in said step of forming said second resin layer, said molding surface of said sealing mold comes into pressure contact with the lower surface of said base with a film interposed therebetween.

12. The method of manufacturing a semiconductor device according to claim 1 , wherein said first resin portion is formed so as to cover at least said entire functional portion, or said first resin portion is formed as a frame through which a portion of or the entire functional portion is exposed.

13. The method of manufacturing a semiconductor device according to claim 1 , wherein said first resin portion comprises a concave member;

wherein a first thickness of a concave portion of said concave member is smaller than a second thickness of said concave member.

14. A method of manufacturing a semiconductor device comprising:

forming a first resin layer on a wafer having a functional portion provided therein;

patterning said first resin layer into a predetermined shape and forming a first resin portion on said functional portion or around said functional portion;

dividing said wafer into elements;

mounting said elements on an upper surface of a base;

bringing a molding surface of a sealing mold into pressure contact with an upper surface of said first resin portion and a lower surface of said base, and injecting a second resin into a gap portion around said first resin portion among said gap portions surrounded by said molding surface of said sealing mold to form a second resin layer around said first resin portion; and

removing said first resin portion to expose a portion of said element to the outside,

wherein in said step of forming said second resin layer, the upper surface of said first resin portion is flush with the upper surface of said second resin layer, or the upper surface of said first resin portion is higher than that of said second resin layer, and

wherein said step of exposing a portion of said element to the outside comprises immersing said first resin portion into a remover to remove said first resin portion using an adhesive tape.