Integrated circuit system with band to band tunneling and method of manufacture thereof

1. A method of manufacture of an integrated circuit system comprising:

providing a semiconductor substrate;

implanting a well region, having a first conductivity, on the semiconductor substrate;

patterning a gate oxide layer on the well region;

implanting a source, having a second conductivity, at a first angle;

selectively implanting a dopant pocket completely within the source, having a third conductivity that is opposite the second conductivity, with mid-gap dopants at the first angle; and

implanting a drain, having the third conductivity, at a second angle for forming a transistor channel asymmetrically positioned under the gate oxide layer.

2. The method as claimed in claim 1 further comprising forming a gate electrode over the gate oxide layer.

3. The method as claimed in claim 1 wherein selectively implanting the dopant pocket includes implanting mid-gap dopants, P+dopants, or a combination thereof.

4. The method as claimed in claim 1 further comprising tunneling a tunneling electron across a conduction barrier by reverse biasing the transistor channel.

5. The method as claimed in claim 1 further comprising forming an intermediate energy state in the conduction barrier.

6. A method of manufacture of an integrated circuit system comprising:

providing a semiconductor substrate having a buried oxide layer;

implanting a well region, having a first conductivity, on the semiconductor substrate, in which the well region is on the buried oxide layer;

patterning a gate oxide layer on the well region;

implanting a source, having a second conductivity, at a first angle for implanting under the gate oxide layer;

selectively implanting a dopant pocket completely within the source, having a third conductivity that is opposite the second conductivity, at the first angle for forming the dopant pocket including mid-gap dopants under the gate oxide layer; and

implanting a drain, having the third conductivity, at a second angle for forming a transistor channel asymmetrically positioned under the gate oxide layer.

7. The method as claimed in claim 6 further comprising forming a gate electrode over the gate oxide layer including forming spacers on a vertical edge of the gate electrode and the gate oxide layer.

8. The method as claimed in claim 6 wherein selectively implanting the dopant pocket includes implanting mid-gap dopants, P+dopants, or a combination thereof including forming interface states between the gate oxide layer and the well region.

9. The method as claimed in claim 6 further comprising tunneling a tunneling electron across a conduction barrier by reverse biasing the transistor channel including crossing from filled states near a p-side valence bond to an n-side conduction band.

10. The method as claimed in claim 6 further comprising forming an intermediate energy state in the conduction barrier including forming an exchange region, in the conduction barrier, by the mid-gap dopants.

11. An integrated circuit system comprising:

a semiconductor substrate;

a well region, having a first conductivity, implanted on the semiconductor substrate;

a gate oxide layer patterned on the well region;

a source, having a second conductivity, implanted at a first angle;

a dopant pocket, having a third conductivity that is opposite the second conductivity, completely within the source and selectively implanted with mid-gap dopants at the first angle; and

a drain, having the third conductivity, implanted at a second angle for forming a transistor channel asymmetrically positioned under the gate oxide layer.

12. The system as claimed in claim 11 further comprising a gate electrode over the gate oxide layer.

13. The system as claimed in claim 11 wherein the dopant pocket selectively implanted includes mid-gap dopants, P+dopants, or a combination thereof implanted under the gate oxide layer.

14. The system as claimed in claim 11 wherein the transistor channel is reverse biased to launch by a tunneling electron across a conduction barrier.

15. The system as claimed in claim 11 wherein the transistor channel includes an intermediate energy state for crossing the conduction barrier.

16. The system as claimed in claim 11 further comprising:

a buried oxide layer on the semiconductor substrate with the well region formed thereon; and

wherein:

the source is implanted under the gate oxide layer; and

the dopant pocket and mid-gap dopants under the gate oxide layer.

17. The system as claimed in claim 16 further comprising a gate electrode over the gate oxide layer includes spacers on a vertical edge of the gate electrode and the gate oxide layer.

18. The system as claimed in claim 16 wherein the dopant pocket selectively implanted includes mid-gap dopants, P+dopants, or a combination thereof implanted including interface states between the gate oxide layer and the well region formed.

19. The system as claimed in claim 16 wherein the transistor channel reverse biased for tunneling by a tunneling electron across a conduction barrier includes the tunneling electron in filled states near a p-side valence bond launched to an n-side conduction band.

20. The system as claimed in claim 16 wherein the transistor channel includes an intermediate energy state for crossing the conduction barrier including an exchange region formed, in the conduction barrier, by the mid-gap dopants.