Selective nanotube growth inside vias using an ion beam
View Patent ↗A method of selectively growing one or more carbon nano-tubes includes forming an insulating layer on a substrate, the insulating layer having a top surface; forming a via in the insulating layer; forming an active metal layer over the insulating layer, including sidewall and bottom surfaces of the via; and removing the active metal layer at portions of the top surface with an ion beam to enable the selective growth of one or more carbon nano-tubes inside the via.
1. A method of selectively growing one or more carbon nano-tubes, comprising:
forming an insulating layer on a substrate, the insulating layer having a top surface;
forming a via in the insulating layer;
forming an active metal layer over the insulating layer, including sidewall and bottom surfaces of the via; and
removing the active metal layer from the top surface with an ion beam, such that the active metal layer remains on bottom surfaces of the via and most of the sidewall surfaces of the via, to enable the selective growth of one or more carbon nano-tubes inside the via.
2. The method as in claim 1 , further comprising forming the one or more carbon nano-tubes from the active metal layer inside the via by applying carbon-containing gas inside the via.
3. The method as in claim 1 , wherein the one or more carbon nano-tubes are formed by a chemical vapor deposition (CVD) process under a pressure ranging from about 100 Torr to about 300 Torr.
4. The method as in claim 1 , wherein the one or more carbon nano-tubes are formed by a plasma enhanced chemical vapor deposition (PECVD) process under a pressure ranging from about 4 Torr to 8 Torr.
5. The method as in claim 1 , wherein the ion beam is tuned at a shallow angle during the removal of the active metal layer at portions of the top surface in order to prevent the removal of the active metal layer at a bottom portion of the via.
6. The method as in claim 5 , wherein the shallow angle is in a range from about −1 degrees to about −4 degrees.
7. The method as in claim 1 , wherein the ion beam is operating at an energy level from about 100 eV to about 400 eV.
8. The method as in claim 1 , further comprising heating the substrate at a temperature from about 500° Celsius to about 800° Celsius to enable the selective growth of one or more carbon nano-tubes inside the via.
9. The method as in claim 1 , further comprising applying another ion beam at a steep angle to the active metal layer inside the via so as to partially remove or modify the active metal layer at the bottom surface of the via, enabling a single carbon nano-beam to grow inside the via.
10. The method as in claim 9 , wherein the steep angle is in a range from about −46 degrees to about −90 degrees.
11. A method of selectively growing carbon nano-tubes, comprising:
forming an insulating layer on a substrate, the insulating layer having a top surface;
forming a via in the insulating layer;
forming an active metal layer over the insulating layer;
removing the active metal layer from the top surface with a first ion beam tuned at a shallow angle in order to prevent the removal of the active metal layer at a bottom portion of the via, such that the active metal layer also remains on most of the sidewall surfaces of the via; and
applying a carbon-containing gas to the via to form one or more carbon nano-tubes.
12. The method as in claim 11 , further comprising applying a second ion beam at a steep angle to the active metal layer inside the via so as to partially remove or modify the active metal layer at the bottom surface of the via, enabling the selective growth of a single carbon nano-tube inside the via.
13. The method as in claim 12 , wherein the steep angle is in a range from about −46 degrees to about −90 degrees.
14. The method as in claim 11 , wherein the shallow angle is in a range from about −1 degrees to about −4 degrees.
15. The method as in claim 11 , wherein the first ion beam is operating at an energy level from about 100 eV to about 400 eV.
16. The method as in claim 11 , wherein the one or more carbon nano-tubes are formed by a chemical vapor deposition (CVD) process under a pressure ranging from about 100 Torr to about 300 Torr.
17. The method as in claim 11 , wherein the one or more carbon nano-tubes are formed by a plasma enhanced chemical vapor deposition (PECVD) process under a pressure ranging from about 4 Torr to 8 Torr.
18. The method as in claim 11 , further comprising heating the substrate at a temperature from about 500° Celsius to about 800° Celsius to enable the selective growth of one or more carbon nano-tubes inside the via.
19. A method of selectively growing carbon nano-tubes, comprising:
forming an insulating layer on a substrate, the insulating layer having a top surface;
forming a via in the insulating layer;
forming an active metal layer over the insulating layer, including sidewall and bottom surfaces of the via;
removing the active metal layer from the top surface with a first ion beam tuned at a shallow angle in order to prevent the removal of the active metal layer at a bottom portion of the via, such that the active metal layer also remains on most of the sidewall surfaces of the via;
applying a carbon-containing gas to the via; and
applying a second ion beam at a steep angle to the active metal inside the via so as to partially remove or modify the active metal layer at the bottom surface of the via, enabling selective growth of a single carbon nano-tube inside the via.
20. The method as in claim 19 , wherein the steep angle is in a range from about −46 degrees to about −90 degrees and the shallow angle is in a range from about −1 degrees to about −4 degrees.