Nanostructured dielectric materials for high energy density multi layer ceramic capacitors
View Patent ↗A high energy density multilayer ceramic capacitor, having at least two electrode layers and at least one substantially dense polycrystalline dielectric layer positioned therebetween. The at polycrystalline dielectric layer has an average grain size of less than about 300 nanometers, a particle size distribution of between about 150 nanometers and about 3 micrometers, and a maximum porosity of about 1 percent. The dielectric layer is selected from the group including TiO 2 , BaTiO 3 , Al 2 O 3 , ZrO 2 , lead zirconium titanate, and combinations thereof and has a breakdown strength of at least about 1100 kV per centimeter.
1. A dielectric substrate, comprising:
a grain boundary matrix;
a plurality of substantially homogeneous substantially high purity nano-scale TiO 2 grains connected by the grain boundary matrix and defining a sintered solid; and
a plurality of pores extending throughout the sintered solid;
wherein the grain boundary has a thickness of no more than about 1 nanometer;
wherein the dielectric substrate has a breakdown strength of at least about 1100 kV per centimeter;
wherein the grains are less than about 300 nanometers in diameter; and
wherein the volume of the plurality of pores is less than about 1% of the total volume of the sintered solid.
2. The dielectric substrate of claim 1 wherein the volume of the plurality of pores is less than about 0.1 percent of the total volume of the sintered solid.
3. The dielectric substrate of claim 1 wherein the volume of the plurality of pores is less than about 0.01 percent of the total volume of the sintered solid.
4. The dielectric substrate of claim 1 wherein the grain boundary has a volume less than about 1.5 percent of the total volume of the sintered solid.
5. The dielectric substrate of claim 1 wherein the dielectric substrate has a breakdown strength of at least about 1300 kV per centimeter.
6. The dielectric substrate of claim 1 wherein the dielectric substrate has a breakdown strength of at least about 1500 kV per centimeter.
7. A dielectric material, comprising:
a grain boundary matrix;
a plurality of substantially homogeneous titania grains connected by the grain boundary matrix and defining a sintered solid; and
a volume of pores distributed throughout the sintered solid;
wherein the grain boundary matrix defines a first composition;
wherein the substantially homogeneous titania grains define a second composition;
wherein the sintered solid has an average grain size of less than about 300 nanometers in diameter; and
wherein the volume of pores is less than about 1% of the total volume of the sintered solid.
8. The dielectric material of claim 7 wherein the volume of the plurality of pores is less than about 0.1 percent of the total volume of the sintered solid.
9. The dielectric material of claim 7 wherein the volume of the plurality of pores is less than about 0.01 percent of the total volume of the sintered solid.
10. The dielectric material of claim 7 wherein the grain boundary has a thickness of less than about 1 nanometer.
11. The dielectric material of claim 7 wherein the grain boundary has a volume less than about 1.5 percent of the total volume of the sintered solid.
12. The dielectric material of claim 7 wherein the sintered solid has a breakdown strength of at least about 1100 kV per centimeter.
13. The dielectric material of claim 7 wherein the sintered solid has a breakdown strength of at least about 1300 kV per centimeter.
14. The dielectric material of claim 7 wherein the sintered solid has a breakdown strength of at least about 1500 kV per centimeter.
15. The dielectric material of claim 7 wherein the sintered solid has an average grain size of less than about 100 nanometers.
16. A dielectric body, comprising:
a plurality of sintered TiO 2 grains defining a body;
a grain boundary material extending between the respective grains; and
a plurality of pores distributed throughout the body;
wherein the body has a dielectric breakdown strength of at least about 1100 kV per centimeter;
wherein the grain boundary material has a thickness of less than about 1 nanometer;
wherein each respective grain is less than about 300 nanometers in diameter; and
wherein the volume of pores is less than about 1% of the total volume of the sintered solid.
17. The dielectric body of claim 16 wherein the body has a breakdown strength of at least about 1500 kV per centimeter.
18. The dielectric body of claim 16 wherein the volume of the plurality of pores is less than about 0.1 percent of the total volume of the sintered solid.
19. The dielectric body of claim 16 wherein the volume of the plurality of pores is less than about 0.01 percent of the total volume of the sintered solid.