IP Library › Granted Patent US 9,356,250
Granted Patent B2
US 9,356,250 · App. 12/552,817 · Granted May 31, 2016

Light-emitting element, comprising an organometallic complex light-emitting material, a light-emitting device and an electronic device comprising the light-emitting element

Inventors: Nobuharu Ohsawa (Kanagawa, JP); Hideko Inoue (Kanagawa, JP); Satoshi Seo (Kanagawa, JP)
Assignee: Semiconductor Energy Laboratory Co., Ltd.
H01L51/5012H01L51/5016H01L51/0081H01L51/0085H01L51/5036H01L2251/552
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Quick Facts
Patent No.
US 9,356,250
App. No.
12/552,817
Granted
May 31, 2016
Kind
B2
Abstract

To provide a light-emitting element with high light emission efficiency, a long lifetime, and reduced driving voltage. To provide a light-emitting element including an anode, a cathode, and a plurality of light-emitting layers which are in contact with each other so that a stacked structure is formed, between the anode and the cathode, in which the plurality of light-emitting layers are formed with a first light-emitting layer which is close to the anode and a second light-emitting layer which is close to the cathode, the first light-emitting layer and the second light-emitting layer each include a host material, a hole-transporting material, and a light-emitting material, and the concentration of the hole-transporting material in the first light-emitting layer is higher than the concentration of the hole-transporting material in the second light-emitting layer.

Claims (72)

1. A light-emitting element comprising:

an anode;

a first light-emitting layer over the anode;

a second light-emitting layer over the first light-emitting layer; and

a cathode over the second light-emitting layer,

wherein each of the first light-emitting layer and the second light-emitting layer comprises a host material, a hole-transporting material, and a light-emitting material,

wherein a mass ratio of the hole-transporting material to the host material in the first light-emitting layer is greater than or equal to 0.25 and less than or equal to 0.5, and

wherein a mass ratio of the hole-transporting material to the host material in the second light-emitting layer is equal to 0.1.

2. The light-emitting element according to claim 1 , wherein the host material has an electron-transporting property.

3. The light-emitting element according to claim 1 , wherein the hole-transporting material is an aromatic amine compound or a carbazole derivative.

4. The light-emitting element according to claim 1 , wherein the light-emitting material comprises iridium.

5. A light-emitting element comprising:

an anode;

a hole-injection layer over the anode;

a hole-transporting layer over the hole-injection layer;

a first light-emitting layer over the hole-transporting layer;

a second light-emitting layer over the first light-emitting layer; and

a cathode over the second light-emitting layer,

wherein each of the first light-emitting layer and the second light-emitting layer comprises a host material, a hole-transporting material, and a light-emitting material,

wherein each of the hole-injection layer and the hole-transporting layer comprises the hole-transporting material,

wherein the host material is a heteroaromatic compound or a metal complex, and has an electron-transporting property,

wherein the hole-transporting material is a carbazole derivative,

wherein the light-emitting material is a compound emitting phosphorescence,

wherein a mass ratio of the hole-transporting material to the host material in the first light-emitting layer is greater than or equal to 0.25 and less than or equal to 0.5, and

wherein a mass ratio of the hole-transporting material to the host material in the second light-emitting layer is equal to 0.1.

6. The light-emitting element according to claim 1 , further comprising:

an electron-transporting layer between the second light-emitting layer and the cathode,

wherein the second light-emitting layer is in contact with the electron-transporting layer.

7. A light-emitting device comprising the light-emitting element according to claim 1 .

8. An electronic device comprising the light-emitting device according to claim 7 .

9. The light-emitting element according to claim 1 , wherein the hole-transporting layer further comprises a transition metal oxide.

10. A lighting device comprising the light-emitting element according to claim 1 .

11. A light-emitting element comprising:

an anode;

a cathode;

a first light-emitting layer and a second light-emitting layer between the anode and the cathode;

a hole-injection layer between the anode and the first light-emitting layer; and

a hole-transporting layer between the hole-injection layer and the first light-emitting layer,

wherein each of the first light-emitting layer and the second light-emitting layer comprises a host material, a hole-transporting material, and a light-emitting material,

wherein each of the hole-injection layer and the hole-transporting layer comprises the hole-transporting material,

wherein the host material is a heteroaromatic compound or a metal complex, and has an electron-transporting property,

wherein the hole-transporting material is a carbazole derivative,

wherein the light-emitting material is a compound emitting phosphorescence,

wherein a mass ratio of the hole-transporting material to the host material in the first light-emitting layer is greater than or equal to 0.25 and less than or equal to 0.5, and

wherein a mass ratio of the hole-transporting material to the host material in the second light-emitting layer is equal to 0.1.

12. The light-emitting element according to claim 11 , further comprising:

an electron-transporting layer between the second light-emitting layer and the cathode,

wherein the second light-emitting layer is in contact with the electron-transporting layer.

13. A light-emitting device comprising the light-emitting element according to claim 11 .

14. An electronic device comprising the light-emitting device according to claim 13 .

15. The light-emitting element according to claim 11 , wherein the hole-transporting layer further comprises a transition metal oxide.

16. A lighting device comprising the light-emitting element according to claim 11 .

17. A light-emitting element comprising:

an anode;

a cathode; and

a first light-emitting layer and a second light-emitting layer between the anode and the cathode,

wherein each of the first light-emitting layer and the second light-emitting layer comprises a host material, a hole-transporting material, and a light-emitting material,

wherein the host material is one of bis(2-methyl-8-quinolinolato)(4-phenylphenolato)aluminum(III) and 9-[4-(5-phenyl-1,3,4-oxadiazol-2-yl)phenyl]carbazole,

wherein the hole-transporting material is one of 4,4′-bis[N-(1-naphthyl)-N-phenylamino]biphenyl and 4-phenyl-4′-(9-phenyl-9H-carbazol-3-yl)triphenylamine,

wherein the light-emitting material is one of (acetylacetonato)bis(2,3,5-triphenylpyrazinato)iridium(III), bis(2,3,5-triphenylpyrazinato)(dipivaloylmethanato)iridium(III), and bis{2-(4-fluorophenyl)-3,5-dimethylpyrazinato}(picolinato) iridium(III),

wherein a mass ratio of the hole-transporting material to the host material in the first light-emitting layer is greater than or equal to 0.25 and less than or equal to 0.5, and

wherein a mass ratio of the hole-transporting material to the host material in the second light-emitting layer is equal to 0.1.

18. The light-emitting element according to claim 17 , further comprising:

an electron-transporting layer between the second light-emitting layer and the cathode,

wherein the second light-emitting layer is in contact with the electron-transporting layer.

19. A light-emitting device comprising the light-emitting element according to claim 17 .

20. An electronic device comprising the light-emitting device according to claim 19 .

21. The light-emitting element according to claim 17 , further comprising:

a hole-transporting layer between the first light-emitting layer and the anode,

wherein the first light-emitting layer is in contact with the hole-transporting layer.

22. The light-emitting element according to claim 21 , wherein the hole-transporting layer comprises a hole-transporting compound and a transition metal oxide.

23. A lighting device comprising the light-emitting element according to claim 17 .

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Sep 2, 2009
From: OHSAWA, NOBUHARU; INOUE, HIDEKO; SEO, SATOSHI
To: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
Reel/Frame 023185/0129 →
Priority Claims (1)
JP 2008-228080 · Sep 5, 2008 · national
Continuity (1)
Related Publication 20100059741A1 · Mar 11, 2010