String With Refractory Metal Core For String Ribbon Crystal Growth
A method of forming a string for use in a string ribbon crystal provides a refractory metal as a core for the string and forms a first layer of material on the core. A method of growing a ribbon crystal provides a pair of strings. Each string has a refractory metal core. The method further passes the strings through a molten material to grow the ribbon crystal between the pair of strings. A ribbon crystal wafer includes a ribbon crystal material and a pair of strings in the ribbon crystal material. Each string defines an outer edge of the wafer, and each string includes a refractory metal core.
1 . A method of forming a string for use in a string ribbon crystal, the method comprising:
providing a refractory metal as a core for the string; and
forming a first layer of material on the core.
2 . The method of claim 1 , wherein the first layer includes silicon carbide.
3 . The method of claim 1 , further comprising:
forming a second layer of material on the first layer.
4 . The method of claim 3 , wherein the first layer includes silicon carbide and the second layer includes carbon.
5 . The method of claim 1 , wherein forming includes a chemical vapor deposition process.
6 . The method of claim 1 , wherein forming includes forming the first layer in a molten material that substantially forms the string ribbon crystal.
7 . The method of claim 1 , wherein the refractory metal includes titanium, vanadium, nickel, chromium, tantalum, niobium, tungsten, molybdenum, rhenium, or alloys thereof.
8 . A method of growing a ribbon crystal, the method comprising:
providing a pair of strings, each string comprising a refractory metal core; and
passing the strings through a molten material to grow the ribbon crystal between the pair of strings.
9 . The method of claim 8 , wherein each string further comprises a first layer formed on the refractory metal core.
10 . The method of claim 9 , wherein the first layer includes silicon carbide.
11 . The method of claim 9 , wherein each string further comprises a second layer formed on the first layer.
12 . The method of claim 11 , wherein the first layer includes silicon carbide and the second layer includes carbon.
13 . The method of claim 8 , wherein passing the strings through the molten material further includes forming a first layer on the refractory metal core in the molten material.
14 . The method of claim 8 , wherein the refractory metal includes titanium, vanadium, nickel, chromium, tantalum, niobium, tungsten, molybdenum, rhenium, or alloys thereof.
15 . A ribbon crystal wafer comprising:
a ribbon crystal material; and
a pair of strings in the ribbon crystal material, each string defining an outer edge of the wafer, each string comprising a refractory metal core.
16 . A ribbon crystal wafer of claim 15 , wherein each string further comprises a first layer formed on the refractory metal core.
17 . A ribbon crystal wafer of claim 16 , wherein the first layer includes silicon carbide.
18 . A ribbon crystal wafer of claim 16 , wherein each string further comprises a second layer formed on the first layer.
19 . A ribbon crystal wafer of claim 18 , wherein the first layer includes silicon carbide and the second layer includes carbon.
20 . A ribbon crystal wafer of claim 15 , wherein the refractory metal includes titanium, vanadium, nickel, chromium, tantalum, niobium, tungsten, molybdenum, rhenium, or alloys thereof.