Structures, methods and applications for electrical pulse anneal processes
View Patent ↗Structures and methods are provided for nanosecond electrical pulse anneal processes. The method of forming an electrostatic discharge (ESD) N+/P+ structure includes forming an N+ diffusion on a substrate and a P+ diffusion on the substrate. The P+ diffusion is in electrical contact with the N+ diffusion. The method further includes forming a device between the N+ diffusion and the P+ diffusion. A method of annealing a structure or material includes applying an electrical pulse across an electrostatic discharge (ESD) N+/P+ structure for a plurality of nanoseconds.
1. A method of forming an electrostatic discharge (ESD) N+/P+ structure comprising:
forming an N+ diffusion on a substrate;
forming a P+ diffusion on the substrate in direct electrical and physical contact with the N+ diffusion thereby forming an ESD diode; and
forming a single device between the N+ diffusion and the P+ diffusion.
2. The method of claim 1 , wherein both the N+ diffusion and the P+ diffusion are formed as ring structures surrounding the device.
3. The method of claim 2 , wherein the N+ diffusion is formed as an outer ring and the P+ diffusion is formed as an inner ring of the ring structures.
4. The method of claim 1 , further comprising forming a contact on the P+ diffusion and a contact on the N+ diffusion to provide an electrical pulse to the P+ diffusion and allow the electrical pulse to flow out of the N+ diffusion, respectively.
5. The method of claim 1 , wherein the N+ diffusion and the P+ diffusion form the ESD N+/P+ structure.
6. The method of claim 1 , wherein the device is an active device.
7. The method of claim 1 , wherein the device has an area of about 50 to 100 μm 2 .
8. The method of claim 1 , wherein the N+ diffusion is formed using implant dopants and the P+ diffusion is formed using implant dopants and further comprising a stabilization anneal of the P+ diffusion and the N+ diffusion.
9. The method of claim 1 , wherein the P+ diffusion and the N+ diffusion are formed as inner and outer ring structures, respectively, surrounding the device.