CMOS image sensor pixel without internal sample/hold circuit
A very small area CMOS image sensor, e.g., for an endoscopic system, includes only four pads (power, ground, digital in, analog out), and includes an array of 4T pixels and associated control circuitry for performing correlated double sampling (CDS) to generate analog reset level and analog signal level values associated with light detected by photodiodes in each pixel. Instead of processing the analog values on-chip, the analog reset values and analog signal values are transmitted in separate sets one row at a time along with interleaved synchronization signals by way of a single analog contact pad, e.g., to a host device of an endoscopic system, which uses the synchronization signals to reconstruct the sensor's internal clock in order to process the analog values. An endoscope housing incorporating the CMOS image sensor thus requires only four wires.
1. A CMOS image sensor comprising:
a semiconductor chip including a metal output pad disposed for connection to an external conductor;
a plurality of pixels fabricated on the chip, each pixel including a photodiode and a plurality of transistors coupled between the photodiode and an associated signal line;
a clock generation circuit disposed on the semiconductor chip for generating an on-chip clock signal;
means for controlling the plurality of pixels such that, during a first time period, a first set of pixels of the plurality of pixels transmits onto an associated first signal line a first set of analog reset values determined by a reset voltage generated inside said first pixel, and such that, during a second time period subsequent to the first time period, said first set of pixels transmits onto said associated first signal line a first set of analog signal values according to a charge stored on said photodiode in accordance with an amount of received radiance;
means for transmitting said set of first analog reset values from said first signal line onto said output pad during said first time period, and for transmitting said first set of analog signal values from said first signal line onto said output pad during said second time period; and
means for transmitting a first synchronization signal onto said output pad prior to said first time period, and for transmitting a second synchronization signal onto said output pad between said first time period and said second time period.
2. The CMOS image sensor of claim 1 , wherein the semiconductor chip has a maximum width and length dimension of 0.7 mm or less.
3. The CMOS image sensor of claim 1 , wherein the semiconductor chip has a maximum width and length dimension of 0.5 mm or less.
4. The CMOS image sensor of claim 1 , further comprising means for transmitting a synchronization signal onto said output pad during one of (a) prior to said first time period, (b) between said first and second time periods, and (c) after said second time period.
5. The CMOS image sensor of claim 1 ,
wherein said plurality of pixels are arranged in an array comprising a plurality of rows and a plurality of columns,
wherein said means for controlling the plurality of pixels comprises means for causing a first row of pixels including said first pixel to sequentially transmit a first set of said analog reset values onto associated signal lines during said first time period, and for causing said first row of pixels to transmit a first set of said analog signal values onto said associated signal lines during said second time period, and
wherein said means for transmitting includes means for sequentially transmitting the first set of said analog reset values from said associated signal lines to said output pad during the first time period, and for sequentially transmitting the first set of said analog signal values from said associated signal lines to said output pad during the second time period.
6. The CMOS image sensor of claim 5 , further comprising means for transmitting a synchronization signal onto said output pad during one of (a) prior to said first time period, (b) between said first and second time periods, and (c) after said second time period.
7. The CMOS image sensor of claim 1 , wherein said semiconductor chip comprises only four contact pads including said output pad.
8. The CMOS image sensor of claim 7 , wherein said means for controlling the plurality of pixels includes means for receiving a system voltage from a first contact pad of said four contact pads, a ground voltage from a second contact pad of said four contact pads, and a digital control signal from a third contact pad of said four contact pads.
9. The CMOS image sensor of claim 8 , wherein said means for controlling the plurality of pixels includes means for controlling a sensor light exposure time per frame in accordance with said digital control signal.
10. A CMOS image sensor comprising:
a semiconductor chip including a metal output pad disposed for connection to an external conductor;
a plurality of pixels fabricated on the chip, each pixel including a photodiode and a plurality of transistors coupled between the photodiode and an associated signal line; and
means for controlling the plurality of pixels such that, during a first time period, a first pixel of the plurality of pixels transmits onto an associated first signal line a first analog reset value determined by a reset voltage generated inside said first pixel, and such that, during a second time period subsequent to the first time period, said first pixel transmits onto said associated first signal line a first analog signal value according to a charge stored on said photodiode in accordance with an amount of received radiance; and
means for transmitting said first analog reset value from said first signal line onto said output pad during said first time period, and for transmitting said first analog signal value from said first signal line onto said output pad during said second time period,
wherein said plurality of pixels are arranged in an array comprising a plurality of rows and a plurality of columns,
wherein said means for controlling the plurality of pixels comprises means for causing a first row of pixels including said first pixel to sequentially transmit a first set of said analog reset values onto associated signal lines during said first time period, and for causing said first row of pixels to transmit a first set of said analog signal values onto said associated signal lines during said second time period,
wherein said means for transmitting includes means for sequentially transmitting the first set of said analog reset values from said associated signal lines to said output pad during the first time period, and for sequentially transmitting the first set of said analog signal values from said associated signal lines to said output pad during the second time period,
wherein the CMOS image sensor further comprises means for transmitting a synchronization signal onto said output pad during one of (a) prior to said first time period, (b) between said first and second time periods, and (c) after said second time period, and
wherein said means for transmitting said synchronization signal onto said output pad comprises at least one of means for transmitting one of a “Start of Frame” and “Start of Row” signal prior to said first time period, and means for transmitting a “Middle of Row” signal between said first time period and said second time period.
11. The CMOS image sensor of claim 10 , wherein said means for transmitting said synchronization signals comprises transmitting said “Start of Row” signal using a first pulse width that is different from a second pulse width associated with said “Middle of Row” signal.
12. The CMOS image sensor of claim 10 , wherein said means for transmitting said synchronization signals comprises transmitting said “Start of Row” signal using a first voltage level that is different from a second voltage level associated with “Middle of Row” signal.
13. A CMOS image sensor comprising:
a semiconductor chip including a metal output pad disposed for connection to an external conductor;
a plurality of pixels fabricated on the chip, each pixel including a photodiode and a plurality of transistors coupled between the photodiode and an associated signal line; and
means for controlling the plurality of pixels such that, during a first time period, a first pixel of the plurality of pixels transmits onto an associated first signal line a first analog reset value determined by a reset voltage generated inside said first pixel, and such that, during a second time period subsequent to the first time period, said first pixel transmits onto said associated first signal line a first analog signal value according to a charge stored on said photodiode in accordance with an amount of received radiance; and
means for transmitting said first analog reset value from said first signal line onto said output pad during said first time period, and for transmitting said first analog signal value from said first signal line onto said output pad during said second time period,
wherein said plurality of pixels are arranged in an array comprising a plurality of rows and a plurality of columns,
wherein said means for controlling the plurality of pixels comprises means for causing a first row of pixels including said first pixel to sequentially transmit a first set of said analog reset values onto associated signal lines during said first time period, and for causing said first row of pixels to transmit a first set of said analog signal values onto said associated signal lines during said second time period,
wherein said means for transmitting includes means for sequentially transmitting the first set of said analog reset values from said associated signal lines to said output pad during the first time period, and for sequentially transmitting the first set of said analog signal values from said associated signal lines to said output pad during the second time period,
wherein the CMOS image sensor further comprises means for transmitting a synchronization signal onto said output pad during one of (a) prior to said first time period, (b) between said first and second time periods, and (c) after said second time period,
wherein said CMOS image sensor comprises color filters arranged in a Bayer pattern such that red filters are disposed over selected pixels of said first row of pixels, and blue filters are disposed over selected pixels of an adjacent second row of pixels, and
wherein said means for transmitting said synchronization signals comprises means for transmitting a “Start of Red Row” signal having a first analog value prior to transmitting analog reset values from said first row of pixels, and for transmitting a “Start of Blue Row” signal having a second analog value prior to transmitting analog reset values from said second row of pixels.