Setup method of substrate processing apparatus

1. A setup method of a substrate processing apparatus, the substrate processing apparatus comprising: a plurality of process chambers configured to process substrates; a plurality of process chamber control units connected to the plurality of process chambers to individually control operations of the plurality of process chambers; a comprehensive control unit configured to be connectable to the plurality of process chamber control units to comprehensively control the operations of the plurality of process chambers through the plurality of process chamber control units; and a first operation unit configured to be connectable to the comprehensive control unit and the plurality of process chamber control units to transmit an operation command to the plurality of process chamber control units through the comprehensive control unit and to receive an operation report from the plurality of process chamber control units through the comprehensive control unit, the setup method comprising a process chamber test process comprising:

connecting a test terminal including a pseudo comprehensive control unit and a second operation unit to the plurality of process chamber control units with the plurality of process chamber control units being separated from the comprehensive control unit and the first operation unit;

transmitting a process chamber test operation command from the second operation unit to the plurality of process chamber control units through the pseudo comprehensive control unit;

testing the operations of the plurality of process chambers in parallel by the plurality of process chamber control units receiving the process chamber test operation command; and

transmitting process chamber test operation reports from the plurality of process chamber control units to the second operation unit through the pseudo comprehensive control unit.

2. The setup method according to claim 1 , wherein the substrate processing apparatus further comprises:

a carrying chamber connected to communicate with the plurality of process chambers; and

a carrying mechanism configured to carry the substrates between the plurality of process chambers and the carrying chamber, wherein the comprehensive control unit is connected to the carrying mechanism to control a carrying operation of the carrying mechanism, and

wherein the setup method further comprises a carrying test process after the process chamber test process, the carrying test process comprising:

connecting the first operation unit to the comprehensive control unit and the plurality of process chamber control units with the test terminal being separated from the plurality of process chamber control units;

transmitting a carrying test operation command from the first operation unit to the comprehensive control unit;

communicating the plurality of process chambers with the carrying chamber, and testing the carrvina operation of the carrying mechanism by the comprehensive control unit receiving the carrying test operation command; and

transmitting a carrying test operation report from the comprehensive control unit to the first operation unit.

3. The setup method according to claim 2 , comprising:

at least one of an I/O check process, wherein an operation check of input/output valves provided in the substrate processing apparatus is performed,

wherein a depressurization operation check of interiors provided in the substrate processing apparatus is performed, and a

wherein the carrying operation check of the carrying mechanism provided in the substrate processing apparatus is performed.

4. The setup method according to claim 2 , wherein the carrying operation of the carrying mechanism and the operations of the plurality of process chambers are performed in parallel.

5. The setup method according to claim 1 , further comprising:

connecting a plurality of test terminals to the plurality of process chamber control units.

6. The setup method according to any one of claims 1 - 3 , 4 , and 5 , wherein the substrate processing apparatus is one of a cluster type and an in-line type.

7. A method of manufacturing a semiconductor device, the method comprising:

a setup process of a substrate processing apparatus and a substrate processing process using the substrate processing apparatus, the substrate processing apparatus comprising:

a plurality of process chambers configured to process substrates; a plurality of process chamber control units connected to the plurality of process chambers to individually control operations of the plurality of process chambers;

a comprehensive control unit configured to be connectable to the plurality of process chamber control units to comprehensively control the operations of the plurality of process chambers through the plurality of process chamber control units; and

a first operation unit configured to be connectable to the comprehensive control unit and the plurality of process chamber control units to transmit an operation command to the plurality of process chamber control units through the comprehensive control unit and to receive an operation report from the plurality of process chamber control units through the comprehensive control unit, the setup process including a process chamber test process comprising:

connecting a test terminal including a pseudo comprehensive control unit and a second operation unit to the plurality of process chamber control units with the plurality of process chamber control units being separated from the comprehensive control unit and the first operation unit;

transmitting a process chamber test operation command from the second operation unit to the plurality of process chamber control units through the pseudo comprehensive control unit;

testing the operations of the plurality of process chambers in parallel by the plurality of process chamber control units receiving the process chamber test operation command; and

transmitting process chamber test operation reports from the plurality of process chamber control units to the second operation unit through the pseudo comprehensive control unit.

8. The method according to claim 7 ,

wherein the substrate processing apparatus further comprises: a carrying chamber connected to communicate with the plurality of process chambers; and a carrying mechanism configured to carry the substrates between the plurality of process chambers and the carrying chamber, wherein the comprehensive control unit is connected to the carrying mechanism to control a carrying operation of the carrying mechanism, and

wherein the setup process further comprises a carrying test process performed after the process chamber test process, the carrying test process comprising:

connecting the first operation unit to the comprehensive control unit and the plurality of process chamber control units with the test terminal being separated from the plurality of process chamber control units;

transmitting a carrying test operation command from the first operation unit to the comprehensive control unit;

communicating the plurality of process chambers with the carrying chamber, and testing the carrying operation of the carrying mechanism by the comprehensive control unit receiving the carrying test operation command; and

transmitting a carrying test operation report from the comprehensive control unit to the first operation unit.

9. The method according to claim 7 , further comprising:

connecting a plurality of the test terminal to the plurality of process chamber control units.

10. The method according to claim 8 ,

wherein the setup process comprises at least one of an I/O check process,

wherein an operation check of input/output valves provided in the substrate processing apparatus is performed,

wherein a depressurization operation check of interiors provided in the substrate processing apparatus is performed, and

wherein the carrying operation check of the carrying mechanism provided in the substrate processing apparatus is performed.

11. The method according to claim 8 , wherein the carrying operation of the carrying mechanism and the operations of the plurality of process chambers are performed in parallel.

12. The method according to claim 7 , wherein the substrate processing process comprises:

supplying a process gas into the process chamber with the substrates accommodated therein; and

generating plasma in an inside of the process chamber using a high-frequency power to process surfaces of the substrates.

13. The method according to claim 7 , wherein the substrate processing process comprises:

supplying a process gas into the process chamber with the substrates accommodated therein to form a thin film on the substrates, an oxide film or a nitride film on surfaces of the substrates, or a metal thin film on the substrates.

14. The method according to claim 7 , wherein the substrate processing process comprises:

loading the substrates held horizontally by a substrate holder in multiple stages into the process chamber;

adjusting an inside temperature and an inside pressure of the process chamber;

supplying a process gas into the process chamber to process the substrates; and

unloading the substrates held by the substrate holder out of the process chamber.