IP Library › Granted Patent US 8,394,203
Granted Patent B2
US 8,394,203 · App. 12/563,356 · Granted Mar 12, 2013

In-situ cleaning of an imprint lithography tool

Inventors: Gerard M. Schmid (Austin, TX); Ian Matthew McMackin (Austin, TX); Byung-Jin Choi (Austin, TX); Douglas J. Resnick (Leander, TX)
Assignee: Molecular Imprints, Inc.
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Quick Facts
Patent No.
US 8,394,203
App. No.
12/563,356
Granted
Mar 12, 2013
Kind
B2
Abstract

Imprint lithography system may provide for an energy source for solidification of material positioned between a template and a substrate. Additionally, the energy source and/or an additional energy source may be used to clean contaminants from the template and/or the substrate.

Claims (14)

1. A method of cleaning an imprint lithography template in an imprint lithography system, the method comprising:

irradiating a surface of the template with vacuum ultraviolet radiation from a vacuum ultraviolet radiation source while the template is arranged within the imprint lithography system

wherein the vacuum ultraviolet radiation source is positioned in a chamber, and further comprising establishing a substantially laminar flow of non-UV-absorbing gas in the chamber flowing from the vacuum ultraviolet radiation source toward the template surface during the irradiating of the template surface.

2. The method of claim 1 , wherein the vacuum ultraviolet radiation source comprises a dielectric barrier discharge source.

3. The method of claim 1 , wherein irradiating the surface of the template includes irradiating an active surface of the template.

4. The method of claim 1 , further comprising positioning the template proximate the vacuum ultraviolet radiation source prior to irradiating the template.

5. The method of claim 1 , further comprising positioning the vacuum ultraviolet radiation source proximate the template prior to irradiating the template.

6. The method of claim 1 , wherein the non-UV-absorbing gas is nitrogen or argon.

7. The method of claim 1 , wherein a pressure in the chamber is greater than or substantially equal to atmospheric pressure.

8. The method of claim 1 , further comprising loading or unloading a substrate in the imprint lithography system while irradiating the template.

9. The method of claim 1 , wherein the template is coupled to a template chuck.

10. The method of claim 1 , further comprising flowing gas over a surface of the template and exhausting the gas from the imprint lithography system to remove contaminants from the imprint lithography system.

11. The method of claim 6 wherein the non-UV absorbing gas is nitrogen.

12. The method of claim 6 wherein the non-UV absorbing gas is argon.

Assignments (2)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Oct 17, 2014
From: MOLECULAR IMPRINTS, INC.
To: CANON NANOTECHNOLOGIES, INC.
Reel/Frame 033971/0445 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Nov 5, 2009
From: SCHMID, GERARD M.; MCMACKIN, IAN MATTHEW; CHOI, BYUNG-JIN; RESNICK, DOUGLAS J.
To: MOLECULAR IMPRINTS, INC.
Reel/Frame 023476/0216 →
Continuity (3)
Provisional Application 61182912 · Jun 1, 2009
Provisional Application 61102082 · Oct 2, 2008
Related Publication 20100085555A1 · Apr 8, 2010