MEMS package that includes MEMS device wafer bonded to cap wafer and exposed array pads

1. A package of a micro-electro-mechanical systems (MEMS) device, the package comprising:

a cap wafer;

a plurality of bonding bumps formed over the cap wafer;

a plurality of array pads arrayed on an outer side of the bonding bumps;

a sealing line formed between the bonding bumps and the array pads to encompass the bonding bumps; and

an MEMS device wafer bonded to an upper portion of the cap wafer in a manner to expose the array pads,

wherein the MEMS device wafer comprises:

a silicon on insulator (SOI) substrate;

an insulation layer formed over the SOI substrate;

a plurality of inner pads formed over the insulation layer;

a plurality of barrier walls separated from the inner pads and bonded to the sealing line; and

a moving part supported by the inner pads.

2. The package of claim 1 , wherein the bonding bumps and the sealing line are formed substantially at the same layer level.

3. The package of claim 1 , wherein the cap wafer comprises:

a plurality of inner pads;

a plurality of outer pads;

a plurality of inner interconnection lines respectively coupling the inner pads to the outer pads;

an insulation layer covering the inner pads, the outer pads, and the inner interconnection lines;

a plurality of first plugs formed in the insulation layer and respectively coupling the inner pads to the bonding bumps; and

a plurality of second plugs formed in the insulation layer and respectively coupling the outer pads to the array pads.

4. The package of claim 3 , wherein the inner pads, the outer pads, and the inner interconnection lines are formed substantially at the same layer level.

5. The package of claim 3 , wherein the first plugs and the second plugs are formed substantially at the same layer level.

6. The package of claim 1 , wherein the inner pads are bonded to respective ones of the bonding bumps.

7. The package of claim 1 , wherein the moving part is formed between the barrier walls.

8. The package of claim 1 , wherein the inner pads, the barrier walls, and the moving part each include substantially the same material.

9. The package of claim 8 , wherein the inner pads, the barrier walls, and the moving part each include a silicon-based material.

10. The package of claim 1 , wherein the cap wafer and the MEMS device wafer are separated to a certain distance by the sealing line and the barrier walls.

11. The package of claim 1 , wherein the inner pads are bonded to respective ones of the bonding bumps through a bonding promoter.

12. The package of claim 11 , wherein the bonding promoter includes one selected from a TiW/Au structure, a Ti/Al structure, a Ti/TiN/Al structure, and a TiN/Al structure.

13. The package of claim 1 , wherein the barrier walls are bonded to the sealing line through a bonding promoter.

14. The package of claim 13 , wherein the bonding promoter includes one selected from a TiW/Au structure, a Ti/Al structure, a Ti/TiN/Al structure, and a TiN/Al structure.

15. The package of claim 1 , wherein the bonding bumps are formed to have substantially the same height as the sealing line.

16. The package of claim 15 , wherein the bonding bumps are formed thicker than the array pads.

17. The package of claim 1 , wherein the bonding bumps and the sealing line are formed with an area being about 7% to 35% of the total area of the cap wafer.