Semiconductor device and associated layouts having linear shaped gate electrodes defined along at least five adjacent gate electrode tracks of equal pitch
View Patent ↗A layout of a cell of a semiconductor device is disclosed to include a diffusion level layout including a plurality of diffusion region layout shapes to be formed within a portion of a substrate, including a p-type diffusion region layout shape and an n-type diffusion region layout shape separated by a central inactive region. The layout of the cell also includes a gate electrode level layout defined to include a number of linear-shaped layout features placed to extend in only a first parallel direction. Each of the number of the linear-shaped layout features within the gate electrode level layout of the restricted layout region is rectangular-shaped. The gate electrode level layout includes linear-shaped layout features defined along at least four different lines of extent in the first parallel direction. The gate electrode level layout corresponds to an entire gate electrode level of the cell.
1. A layout of an integrated circuit device, comprising:
a gate electrode level layout portion including five or more adjacently positioned linear shaped layout features each formed to have a respective length and a respective width when viewed from above, wherein a size of the length of a given linear shaped layout feature is greater than or equal to a size of the width of the given linear shaped layout feature, wherein the five or more adjacently positioned linear shaped layout features are formed to have their lengths extend in a first direction in a parallel manner, wherein the five or more adjacently positioned linear shaped layout features are formed to have a substantially equal centerline-to-centerline spacing between each pair of adjacently positioned linear shaped layout features as measured perpendicular to the first direction, and
wherein the region of the gate electrode level includes six linear shaped layout features each formed to have their lengths extend in the first direction in the parallel manner, wherein the six linear shaped layout features include,
a first linear shaped layout feature defined to form both a gate electrode of a first transistor of a first transistor type and a gate electrode of a first transistor of a second transistor type,
a second linear shaped layout feature defined to form a gate electrode of a second transistor of the first transistor type,
a third linear shaped layout feature defined to form a gate electrode of a second transistor of the second transistor type,
a fourth linear shaped layout feature defined to form a gate electrode of a third transistor of the first transistor type,
a fifth linear shaped layout feature defined to form a gate electrode of a third transistor of the second transistor type,
a sixth linear shaped layout feature defined to form a gate electrode of both a fourth transistor of the first transistor type and a gate electrode of a fourth transistor of the second transistor type.
2. An integrated circuit device, comprising:
a gate electrode level including a region that includes five or more adjacently positioned linear conductive segments each formed to have a respective length and a respective width when viewed from above, wherein a size of the length of a given linear conductive segment is greater than or equal to a size of the width of the given linear conductive segment, wherein the five or more adjacently positioned linear conductive segments are formed to have their lengths extend in a first direction in a parallel manner, wherein the five or more adjacently positioned linear conductive segments are formed to have a substantially equal centerline-to-centerline spacing between each pair of adjacently positioned linear conductive segments as measured perpendicular to the first direction, and
wherein the region of the gate electrode level includes six linear conductive segments each formed to have their lengths extend in the first direction in the parallel manner, wherein the six linear conductive segments include,
a first linear conductive segment defined to form both a gate electrode of a first transistor of a first transistor type and a gate electrode of a first transistor of a second transistor type,
a second linear conductive segment defined to form a gate electrode of a second transistor of the first transistor type,
a third linear conductive segment defined to form a gate electrode of a second transistor of the second transistor type,
a fourth linear conductive segment defined to form a gate electrode of a third transistor of the first transistor type,
a fifth linear conductive segment defined to form a gate electrode of a third transistor of the second transistor type,
a sixth linear conductive segment defined to form a gate electrode of both a fourth transistor of the first transistor type and a gate electrode of a fourth transistor of the second transistor type.
3. An integrated circuit device as recited in claim 2 , wherein an area within the gate electrode level between the gate electrode of the first transistor of the first transistor type and the gate electrode of the second transistor of the first transistor type is devoid of a conductive structure that physically contacts an underlying diffusion region.
4. An integrated circuit device as recited in claim 3 , wherein an area within the gate electrode level between the gate electrode of the third transistor of the first transistor type and the gate electrode of the fourth transistor of the first transistor type is devoid of a conductive structure that physically contacts an underlying diffusion region.
5. An integrated circuit device as recited in 3 , wherein an area within the gate electrode level between the gate electrode of the third transistor of the second transistor type and the gate electrode of the fourth transistor of the second transistor type is devoid of a conductive structure that physically contacts an underlying diffusion region.
6. An integrated circuit device as recited in 3 , wherein an area within the gate electrode level between the gate electrode of the first transistor of the second transistor type and the gate electrode of the second transistor of the second transistor type is devoid of a conductive structure that physically contacts an underlying diffusion region.
7. An integrated circuit device as recited in 6 , wherein an area within the gate electrode level between the gate electrode of the third transistor of the first transistor type and the gate electrode of the fourth transistor of the first transistor type is devoid of a conductive structure that physically contacts an underlying diffusion region.
8. An integrated circuit device as recited in 7 , wherein an area within the gate electrode level between the gate electrode of the third transistor of the second transistor type and the gate electrode of the fourth transistor of the second transistor type is devoid of a conductive structure that physically contacts an underlying diffusion region.
9. An integrated circuit device as recited in 2 , wherein each of the first, second, third, and fourth transistors of the first transistor type is defined to have a respective first dimension as measured in the first direction,
wherein the first dimension of the second transistor of the first transistor type is greater than the first dimension of the third transistor of the first transistor type.
10. An integrated circuit device as recited in 9 , wherein the first dimension of the first transistor of the first transistor type is substantially equal to the first dimension of the second transistor of the first transistor type, and
wherein the first dimension of the fourth transistor of the first transistor type is substantially equal to the first dimension of the third transistor of the first transistor type.
11. An integrated circuit device as recited in 9 , wherein each of the first, second, third, and fourth transistors of the second transistor type is defined to have a respective first dimension as measured in the first direction,
wherein the first dimension of the second transistor of the second transistor type is greater than the first dimension of the third transistor of the second transistor type.
12. An integrated circuit device as recited in 11 , wherein the first dimension of the first transistor of the second transistor type is substantially equal to the first dimension of the second transistor of the second transistor type, and
wherein the first dimension of the fourth transistor of the second transistor type is substantially equal to the first dimension of the third transistor of the second transistor type.
13. An integrated circuit device as recited in 2 , further comprising:
an interconnect level region defined above the gate electrode level region, wherein the interconnect level region includes conductive structures formed to extend in a linear manner in the first direction over the gate electrode level region.
14. An integrated circuit device as recited in 13 , wherein the conductive structures within the interconnect level region include at least two adjacently positioned conductive structures that extend in a parallel manner in the first direction over the gate electrode level region.
15. An integrated circuit device as recited in 14 , wherein the at least two adjacently positioned conductive structures are separated by a centerline-to-centerline spacing substantially equal to the centerline-to-centerline spacing between each pair of adjacently positioned linear conductive segments within the gate electrode level region.
16. An integrated circuit device as recited in 2 , further comprising:
a diffusion level defined below the gate electrode level, wherein the diffusion level includes diffusion regions of a first type that form part of the first, second, third, and fourth transistors of the first transistor type, and wherein the diffusion level includes diffusion regions of a second type that form part of the first, second, third, and fourth transistors of the second transistor type,
wherein the diffusion level includes a first non-active region between either of the first, second, third, or fourth transistors of the first transistor type and a neighboring transistor of the first transistor type.
17. An integrated circuit device as recited in 16 , wherein a size of the first non-active region is less than the centerline-to-centerline spacing between each pair of adjacently positioned linear conductive segments within the gate electrode level region.
18. An integrated circuit device as recited in 16 , wherein the diffusion level includes a second non-active region between either of the first, second, third, or fourth transistors of the second transistor type and a neighboring transistor of the second transistor type.
19. An integrated circuit device as recited in 18 , wherein a size of the second non-active region is less than the centerline-to-centerline spacing between each pair of adjacently positioned linear conductive segments within the gate electrode level region.
20. An integrated circuit device as recited in 2 , further comprising:
a diffusion level defined below the gate electrode level, wherein the diffusion level includes diffusion regions of a first type that form part of the first, second, third, and fourth transistors of the first transistor type, and wherein the diffusion level includes diffusion regions of a second type that form part of the first, second, third, and fourth transistors of the second transistor type,
wherein the diffusion level includes a first non-active region formed below a portion of an area extending between the sixth linear conductive segment and a first neighboring linear conductive segment within the gate electrode level region.
21. An integrated circuit device as recited in 20 , wherein the first neighboring linear conductive segment within the gate electrode level region is formed over the first non-active region.
22. An integrated circuit device as recited in 20 , wherein the first neighboring linear conductive segment within the gate electrode level region forms an gate electrode of a transistor device.
23. An integrated circuit device as recited in 20 , wherein the diffusion level includes a second non-active region formed below a portion of an area extending between the first linear conductive segment and a second neighboring linear conductive segment within the gate electrode level region.
24. An integrated circuit device as recited in 23 , wherein the second neighboring linear conductive segment within the gate electrode level region is formed over the second non-active region.
25. An integrated circuit device as recited in 23 , wherein the second neighboring linear conductive segment within the gate electrode level region forms an gate electrode of a transistor device.