Method for manufacturing flash memory device
View Patent ↗A method for manufacturing a flash memory device is capable of controlling a phenomenon in which a length of the channel between a source and a drain is decreased due to undercut. The method includes forming a gate electrode comprising a floating gate, an ONO film and a control gate using a hard mask pattern over a semiconductor substrate, forming a spacer over the sidewall of the gate electrode, forming an low temperature oxide (LTO) film over the entire surface of the semiconductor substrate including the gate electrode and the spacer, etching the LTO film such that a top portion of the source/drain region and a top portion of the gate electrode are exposed, and removing the LTO film present over the sidewall of the gate electrode by wet-etching.
1. A method for manufacturing a flash memory device, the method comprising:
forming a gate electrode including a floating gate, an oxide-nitride-oxide film and a control gate using a hard mask pattern over a semiconductor substrate;
forming a spacer over the sidewall of the gate electrode;
forming a low temperature oxide (LTO) film over an entire surface of the semiconductor substrate including the gate electrode and the spacer;
etching the low temperature oxide film such that a top portion of a source/drain region and a top portion of the gate electrode are exposed; and
removing the low temperature oxide film present over the sidewall of the gate electrode by wet-etching.
2. The method of claim 1 , including:
implanting ions on a surface of the semiconductor substrate on both sides of the gate electrode to form the source/drain region; and
forming silicide over a surface of the gate electrode and the source/drain region.
3. The method of claim 1 , wherein the formation of the spacer over the sidewall of the gate electrode includes:
sequentially forming an oxide film, a sidewall nitride film and a sidewall oxide film over the entire surface of the semiconductor substrate including the gate electrode; and
forming an oxide-nitride-oxide structure by an etching process.
4. The method of claim 1 , wherein the low temperature oxide film is formed at approximately 180 to 220° C.
5. The method of claim 1 , wherein the low temperature oxide film is formed to a thickness of approximately 100 to 950 Å.
6. The method of claim 1 , wherein the low temperature oxide film is formed for approximately 5 to 120 seconds at an SiH 4 flow rate of approximately 130 to 1,100 sccm and an N 2 O flow rate of approximately 150 to 1,500 sccm.
7. The method of claim 2 , wherein the formation of the salicide includes:
performing a pre-amorphous implantation on the semiconductor substrate;
depositing Ti/TiN over the semiconductor substrate; and
performing RTP-annealing on the semiconductor substrate.
8. The method of claim 1 , wherein the wet-etching of the low temperature oxide film is carried out using DHF at a concentration of approximately 200:1.
9. The method of claim 1 , wherein the wet-etching of the low temperature oxide film is carried out for approximately 10 to 120 seconds.
10. The method of claim 1 , wherein the etching of the low temperature oxide film to expose a top portion of the source/drain region and a top portion of the gate electrode is carried out using dry-etching.
11. An apparatus configured to:
form a gate electrode including a floating gate, an oxide-nitride-oxide film and a control gate using a hard mask pattern over a semiconductor substrate;
form a spacer over the sidewall of the gate electrode;
form a low temperature oxide (LTO) film over an entire surface of the semiconductor substrate including the gate electrode and the spacer;
etch the low temperature oxide film such that a top portion of a source/drain region and a top portion of the gate electrode are exposed; and
remove the low temperature oxide film present over the sidewall of the gate electrode by wet-etching.
12. The apparatus of claim 11 , configured to:
implant ions on a surface of the semiconductor substrate on both sides of the gate electrode to form the source/drain region; and
form silicide over a surface of the gate electrode and the source/drain region.
13. The apparatus of claim 11 configured to form the spacer over the sidewall of the gate electrode by:
sequentially forming an oxide film, a sidewall nitride film and a sidewall oxide film over the entire surface of the semiconductor substrate including the gate electrode; and
forming an oxide-nitride-oxide structure by an etching process.
14. The apparatus of claim 11 , configured to form the low temperature oxide film at approximately 180 to 220° C.
15. The apparatus of claim 11 , configured to form the low temperature oxide film to a thickness of approximately 100 to 950 Å.
16. The apparatus of claim 11 , configured to form the low temperature oxide film for approximately 5 to 120 seconds at an SiH 4 flow rate of approximately 130 to 1,100 sccm and an N 2 O flow rate of approximately 150 to 1,500 sccm.
17. The apparatus of claim 12 , configured to form salicide by:
performing a pre-amorphous implantation on the semiconductor substrate;
depositing Ti/TiN over the semiconductor substrate; and
performing RTP-annealing on the semiconductor substrate.
18. The apparatus of claim 11 , configured to carry out the wet-etching of the low temperature oxide film using DHF at a concentration of approximately 200:1.
19. The apparatus of claim 11 , configured to carry out the wet-etching of the low temperature oxide film for approximately 10 to 120 seconds.
20. The apparatus of claim 11 , configured to carry out the wet-etching of the low temperature oxide film to expose a top portion of the source/drain region and a top portion of the gate electrode using dry-etching.