IP Library Granted Patent US 8,125,266
Granted Patent B2
US 8,125,266 · App. 12/576,664 · Granted Feb 28, 2012

Power supply circuit for charge pump circuit

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Quick Facts
Patent No.
US 8,125,266
App. No.
12/576,664
Granted
Feb 28, 2012
Kind
B2
Abstract

A boosting circuit includes a charge pump circuit; and a power supply circuit configured to supply a power supply voltage to the charge pump circuit. The power supply circuit includes an N-channel transistor connected with a power supply terminal of the charge pump circuit; and a current control circuit configured to control current flowing between the N-channel transistor and the charge pump circuit through the power supply terminal.

Claims (13)

1. A boosting circuit comprising:

a charge pump circuit; and

a power supply circuit configured to supply a power supply voltage to said charge pump circuit,

wherein said power supply circuit comprises:

an N-channel transistor connected with a power supply terminal of said charge pump circuit; and

a current control circuit comprising a resistance element, other than a wiring resistance, connected with a gate of said N-channel transistor through a node, and a capacitance element, other than the gate-source capacitance of said N-channel transistor, connected between said node and said power supply terminal, said current control circuit configured to control current flowing between said N-channel transistor and said charge pump circuit through said power supply terminal,

wherein a gate-to-source voltage of said N-channel transistor is controlled by said resistance element and said capacitance element to be a voltage about equal to a threshold voltage of said N-channel transistor.

2. The boosting circuit according to claim 1 , wherein said current control circuit further comprises:

a resistance value of said resistance element is larger than an ON resistance of said N-channel transistor when said gate-to-source voltage of said N-channel transistor is about equal to said threshold voltage of said N-channel transistor.

3. The boosting circuit according to claim 1 , wherein

a constant voltage is applied to an end of said resistance element which is not connected to said node.

4. The boosting circuit according to claim 2 , wherein a said resistance value of said resistance element is over 100 times larger than said ON resistance of said N-channel transistor when said gate-to-source voltage of said N-channel transistor is about equal to said threshold voltage of said N-channel transistor.

5. The boosting circuit according to claim 3 , wherein a resistance value of said resistance element is over 100 times larger than an ON resistance of said N-channel transistor when said gate-to-source voltage of said N-channel transistor is about equal to said threshold voltage of said N-channel transistor.

Assignments (3)
CHANGE OF ADDRESS Recorded Nov 29, 2017
From: RENESAS ELECTRONICS CORPORATION
To: RENESAS ELECTRONICS CORPORATION
Reel/Frame 044928/0001 →
CHANGE OF NAME Recorded Oct 26, 2010
From: NEC ELECTRONICS CORPORATION
To: RENESAS ELECTRONICS CORPORATION
Reel/Frame 025193/0156 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Dec 23, 2009
From: FURUYA, AKIKO; TONDA, YASUHIRO
To: NEC ELECTRONICS CORPORATION
Reel/Frame 023693/0403 →