Semiconductor structure, pad structure and protection structure
View Patent ↗A semiconductor structure is provided. The semiconductor structure includes a substrate, a dielectric layer, a pad structure and a protection structure. The dielectric layer is disposed on the substrate. The pad structure is disposed in the dielectric layer. The pad structure includes a plurality of first metal layers and a plurality of plugs which are electrically connected to each other vertically. There is no contact plug disposed between the pad structure and the substrate. The protection structure is disposed in the dielectric layer and encompasses the pad structure.
1. A semiconductor structure, comprising:
a substrate;
a dielectric layer disposed on the substrate;
a pad structure disposed in the dielectric layer, the pad structure comprising a plurality of first metal layers and a plurality of plugs which electrically connect to each other vertically wherein there is no contact plug disposed between the pad structure and the substrate; and
a protection structure disposed in the dielectric layer, wherein the protection structure encompasses the pad structure and an air gap is disposed between the pad structure and the protection structure, and a part of the dielectric layer is disposed on an area that is not encompassed by the protection structure.
2. The semiconductor structure as in claim 1 , wherein the pad structure is insulated from the protection structure.
3. The semiconductor structure as in claim 1 , wherein parts of the plugs form a ring structure which encompasses the dielectric layer in the pad structure.
4. The semiconductor structure as in claim 1 , further comprising a metal mask layer disposed on the dielectric layer, wherein the protection structure contacts the mask layer upwardly and contacts the substrate downwardly.
5. The semiconductor structure as in claim 1 , wherein the protection structure comprises a plurality of second metal layers and a plurality of protection rings which connect to each other vertically.
6. A semiconductor structure, comprising:
a substrate;
a dielectric layer disposed on the substrate;
a pad structure disposed in the dielectric layer, the pad structure comprising a plurality of first metal layers and a plurality of plugs which electrically connect to each other vertically;
an insulation structure disposed between the substrate and the pad structure, wherein the pad structure is completely surrounded by the insulation structure; and
a protection structure disposed in the dielectric layer, wherein the protection structure encompasses the pad structure and an air gap is disposed between the pad structure and the protection structure.
7. The semiconductor structure as in claim 6 , wherein the insulation structure includes a shallow trench isolation.
8. The semiconductor structure as in claim 6 , further comprising a material layer disposed between the pad structure and the insulation structure, wherein the material layer includes polysilicon.
9. The semiconductor structure as in claim 6 , wherein the pad structure is insulated from the protection structure.
10. The semiconductor structure as in claim 6 , wherein parts of the plugs form a ring structure which encompasses the dielectric layer in the pad structure.
11. The semiconductor structure as in claim 6 , further comprising a metal mask layer disposed on the dielectric layer, wherein the protection structure contacts the mask layer upwardly and contacts the substrate downwardly.
12. The semiconductor structure as in claim 6 , wherein the protection structure comprises a plurality of second metal layers and a plurality of protection rings which connect to each other vertically.
13. The semiconductor structure as in claim 1 , wherein at least one of the cross area of the first metal layers is different from those of the other first metal layers.
14. The semiconductor structure as in claim 1 , wherein the protection structure comprises a plurality of second metal layers and a plurality of second plugs electrically connected to each other vertically, wherein at least one of the cross areas of the second metal layers is different from those of the other second metal layers.
15. The semiconductor structure as in claim 6 , wherein at least one of the cross area of the first metal layers is different from those of the other first metal layers.
16. The semiconductor structure as in claim 6 , wherein the protection structure comprises a plurality of second metal layers and a plurality of second plugs electrically connected to each other vertically, wherein at least one of the cross areas of the second metal layers is different from those of the other second metal layers.