Method for forming silicon-containing materials during a photoexcitation deposition process
Embodiments of the invention generally provide a method for depositing films or layers using a UV source during a photoexcitation process. The films are deposited on a substrate and usually contain a material, such as silicon (e.g., epitaxy, crystalline, microcrystalline, polysilicon, or amorphous), silicon oxide, silicon nitride, silicon oxynitride, or other silicon-containing materials. The photoexcitation process may expose the substrate and/or gases to an energy beam or flux prior to, during, or subsequent a deposition process. Therefore, the photoexcitation process may be used to pre-treat or post-treat the substrate or material, to deposit the silicon-containing material, and to enhance chamber cleaning processes. Attributes of the method that are enhanced by the UV photoexcitation process include removing native oxides prior to deposition, removing volatiles from deposited films, increasing surface energy of the deposited films, increasing the excitation energy of precursors, reducing deposition time, and reducing deposition temperature.
1. A chamber for processing semiconductor substrates, comprising:
a substrate support disposed inside the chamber;
a window disposed in a lid of the chamber;
a photoexcitation system positioned above the window; and
an apertured baffle plate disposed between the window and the substrate support, the apertured baffle plate comprising a weir, wherein the apertured baffle plate and the lid cooperatively define a purge plenum that has a source of purge gas coupled thereto, and the weir is positioned between the source of purge gas and the aperture at a distance from the aperture.
2. The chamber of claim 1 , wherein the photoexcitation system comprises a UV source.
3. The chamber of claim 2 , wherein the UV source is a continuous UV source.
4. The chamber of claim 2 , wherein the UV source comprises a lamp within a housing, the housing further comprising a conduit for a temperature control medium.
5. The chamber of claim 4 , further comprising a reflector or a refractor positioned to direct light from the lamp at a desired angle to the window.
6. The chamber of claim 4 , wherein the apertured baffle plate and the lid cooperatively define a purge plenum that has a source of purge gas coupled thereto, and the source of purge gas is also coupled to the temperature control conduit.
7. The chamber of claim 1 , further comprising a shutter plate between the photoexcitation system and the substrate support.
8. The chamber of claim 1 , wherein the aperture of the baffle plate is aligned with the window, and the purge plenum comprises a purge gas flow path that crosses the aperture of the baffle plate.