Transparent conductive film, sintered body target for transparent conductive film fabrication, and transparent conductive base material and display device using the same
A transparent conductive film which is amorphous, has a high transmittance of light in the visible region of short wavelengths, and is hard to beak with respect to bending is provided. The transparent conductive film is an amorphous oxide film composed of Ga, In, and O, in which a Ga content ranges from 35 at. % to 45 at. % with respect to all metallic atoms, a resistivity ranges 1.2×10 −3 Ω·cm to 8.0×10 −3 Ω·cm, a film thickness is 500 nm or less, and a transmittance of light at a wavelength of 380 nm is 45% or more.
1. A transparent conductive film formed as an amorphous oxide film composed of Ga, In, and O, wherein Ga content ranges from 35 at. % to 45 at. % with respect to all metallic atoms thereof, film resistivity ranges from 1.2×10 −3 Ω·cm to 8.0×10 −3 Ω·cm, film thickness is 500 nm or less, and the film has a transmittance of light at a wavelength of 380 nm that is 45% or more, and wherein an arithmetic mean height Ra of the transparent conductive film is 2.0 nm or less.
2. A transparent conductive film according to claim 1 , wherein the film thickness is 200 nm or less and the transmittance of light at a wavelength of 380 nm is 60% or more.
3. A transparent conductive film according to claim 1 , wherein the film thickness is 100 nm or less and the transmittance of light at a wavelength of 380 nm is 65% or more.
4. A transparent conductive base material comprising of a transparent substrate selected from a glass plate, a quartz plate, a resin plate or a resin film and having on one or each surface thereof a transparent conductive film formed by using a sintered body target for transparent conductive film fabrication,
wherein the transparent conductive film is formed as an amorphous oxide film composed of Ga, In, and O, wherein Ga content ranges from 35 at. % to 45 at. % with respect to all metallic atoms thereof, film resistivity ranges from 1.2×10 −3 Ω·cm to 8.0×10 −3 Ω·cm, film thickness is 500 nm or less, and the film has a transmittance of light at a wavelength of 380 nm that is 45% or more, and
wherein the target is composed of Ga, In, and O; ranging in Ga content from 35 at. % to 45 at. % with respect to all metallic atoms; being chiefly constructed from a GaInO 3 phase of a β-Ga 2 O 3 -type structure and an In 2 O 3 phase of a bixbyte-type structure; showing an X-ray diffraction peak intensity ratio defined by the following formula which ranges from 50% to 110%; and having a density of 5.8 g/cm 3 or more:
In 2 O 3 phase(400)/β-GaInO 3 phase(111)×100 [%].
5. A transparent conductive base material according to claim 4 , wherein a resistivity of the target is 4.0×10 −2 Ω·cm or less.
6. A transparent conductive base material according to claim 4 , wherein an arithmetic mean height Ra of the transparent conductive film is 2.0 nm or less.
7. A transparent conductive base material comprising of a transparent substrate selected from a resin plate or a resin film and having on one or each surface thereof a gas barrier film selected from silicon nitride, silicon oxide-nitride, or silicon oxide, and a transparent conductive film obtained by using a sintered body target for transparent conductive film fabrication and formed on the gas barrier film,
wherein the transparent conductive film is formed as an amorphous oxide film composed of Ga, In, and O, wherein Ga content ranges from 35 at. % to 45 at. % with respect to all metallic atoms thereof, film resistivity ranges from 1.2×10 −3 Ω·cm to 8.0×10 −3 Ω·cm, film thickness is 500 nm or less, and the film has a transmittance of light at a wavelength of 380 nm that is 45% or more, and
wherein the target is composed of Ga, In, and O; ranging in Ga content from 35 at. % to 45 at. % with respect to all metallic atoms; being chiefly constructed from a GaInO 3 phase of a β-Ga 2 O 3 -type structure and an In 2 O 3 phase of a bixbyte-type structure; showing an X-ray diffraction peak intensity ratio defined by the following formula which ranges from 50% to 110%; and having a density of 5.8 g/cm 3 or more:
In 2 O 3 phase(400)/β-GaInO 3 phase(111)×100 [%].
8. A transparent conductive base material according to claim 7 , wherein a resistivity of the target is 4.0×10 −2 Ω·cm or less.
9. A transparent conductive base material according to claim 7 , wherein an arithmetic mean height Ra of the transparent conductive film is 2.0 nm or less.
10. A display device using a transparent conductive base material including a transparent conductive film formed on one or each surface of a transparent substrate of one selected from a glass plate, a quartz plate, a resin plate, or a resin film, by using a sintered body target for transparent conductive film fabrication,
wherein the transparent conductive film is formed as an amorphous oxide film composed of Ga, In, and O, wherein Ga content ranges from 35 at. % to 45 at. % with respect to all metallic atoms thereof, film resistivity ranges from 1.2×10 −3 Ω·cm to 8.0×10 −3 Ω·cm, film thickness is 500 nm or less, and the film has a transmittance of light at a wavelength of 380 nm that is 45% or more, and
wherein the target is composed of Ga, In, and O; ranging in Ga content from 35 at. % to 45 at. % with respect to all metallic atoms; being chiefly constructed from a GaInO 3 phase of a β-Ga 2 O 3 -type structure and an In 2 O 3 phase of a bixbyte-type structure; showing an X-ray diffraction peak intensity ratio defined by the following formula which ranges from 50% to 110%; and having a density of 5.8 g/cm 3 or more:
In 2 O 3 phase(400)/β-GaInO 3 phase(111)×100 [%].