Method of fabricating back-illuminated imaging sensors
A method for fabricating a back-illuminated semiconductor imaging device on a semiconductor-on-insulator substrate is disclosed. The substrate includes an insulator layer and an epitaxial layer overlying the insulator layer. A bond pad region is formed extending into the epitaxial layer to a surface of the insulator layer. A bond pad is fabricated partially overlying the bond pad region. At least one imaging component is fabricated partially overlying and extending into the epitaxial layer. A passivation layer is fabricated overlying the epitaxial layer, the bond pad, and the at least one imaging component. A handle wafer is bonded to the passivation layer. A portion of the insulator layer and a portion of the bond pad region is etched to expose a portion of the bond pad.
1. A semiconductor device, comprising:
an insulator layer
an epitaxial layer substantially overlying said insulator layer;
at least one bond pad region extending into said epitaxial layer to a surface of said insulator layer, the at least one bond pad region being formed in said insulator layer and said epitaxial layer, said bond pad region having an inner open region extending at least partially therethrough, thereby forming sidewalls in said at least one bond pad region;
at least one bond pad substantially overlying said bond pad region;
at least one component formed at least partially overlying and extending into said epitaxial layer; and
a passivation layer formed substantially overlying said epitaxial layer, said at least one component, and said at least one bond pad.
2. The semiconductor device of claim 1 , further comprising a plurality of alignment keys formed at least partially overlying and extending into said epitaxial layer.
3. The semiconductor device of claim 2 , wherein said alignment keys are filled with one of an oxide of silicon, silicon carbide, silicon nitride, and poly-silicon.
4. The semiconductor device of claim 1 , wherein said epitaxial layer comprises silicon and the insulator layer comprises an oxide of silicon.
5. The semiconductor device of claim 1 , wherein the at least one component at least partially overlying and extending into the epitaxial layer includes at least one of a CMOS imaging component, a charge-coupled device (CCD) component, a photodiode, an avalanche photodiode, and a phototransistor.
6. The semiconductor device of claim 1 , further comprising at least one optical component bonded to said insulator layer.
7. The semiconductor device of claim 6 , wherein the at least one optical component includes at least one of a color filter and a micro-lens.
8. The semiconductor device of claim 2 , wherein said at least one bond pad is formed at a location in the epitaxial layer proximal to the alignment keys.
9. The semiconductor device of claim 1 , further comprising a handle wafer bonded to said passivation layer, wherein pyrex glass is bonded between the passivation layer and the handle wafer.
10. The semiconductor device of claim 1 , wherein the passivation layer is made of an oxide of silicon.
11. The semiconductor device of claim 1 , further comprising a wire bonded to the at least one bond pad.