Reduction of stress during template separation
View Patent ↗Separation of an imprint lithography template and a patterned layer in an imprint lithography process may result in stress to features of the template and/or features of the patterned layer. Such stress may be reduced by minimizing open areas on the template, including dummy features within the open areas, and/or selective positioning of features on the template.
1. An imprint lithography template, comprising:
a plurality of clusters, each cluster having at least one dense feature area, the dense features area having a plurality of features with an aspect ratio between about 0.5 to 3, each cluster separated from adjacent clusters by an open area having a length, wherein the magnitude of the length is equal to or less than about 200 microns, and wherein the open area includes at least one group of dummy features, and wherein the dummy features are positioned at a periodic interval within the open area, wherein the periodic interval is adapted to reduce propagation rate of a separation front.
2. The template of claim 1 , wherein magnitude of the length is equal to or less than about 100 microns.
3. The template of claim 1 , wherein magnitude of the length is adapted to reduce rate of propagation of a separation front.
4. The template of claim 1 , wherein each dense feature area includes a plurality of protrusions and a plurality of recessions.
5. The template of claim 4 , wherein the protrusions are equal to or less than approximately 100 nm.
6. The template of claim 4 , wherein the protrusions are positioned on the template at an angle relative to a separation front.
7. The template of claim 6 , wherein the position of the angle is adapted to reduce fracture energy during separation of the template from a patterned layer.
8. The template of claim 1 , wherein a first dense feature area includes features positioned substantially parallel to a separation front and a second dense feature area includes features positioned substantially perpendicular to the separation front.
9. An imprint lithography template, comprising:
a plurality of clusters, each cluster having at least one dense feature area, the dense features area having a plurality of features with an aspect ratio between about 0.5 to 3, each cluster separated by an open area having a length, wherein magnitude of the length is equal to or less than about 200 microns;
wherein each dense feature area includes a plurality of protrusions and a plurality of recessions, and
wherein at least a portion of the protrusions are positioned at an angle less than 90 degrees relative to a separation front, and at least a portion of the protrusions are positioned substantially perpendicular to the separation front.
10. The template of claim 9 , wherein the angled protrusions are in a radial pattern.
11. The template of claim 9 , wherein the perpendicular protrusions are in a radial pattern.
12. The template of claim 9 , wherein features within the dense feature area have a concave shape such that a center of each feature bows towards the separation front.
13. An imprint lithography template, comprising:
a plurality of clusters, each cluster having at least one dense feature area, the dense features area having a plurality of features with an aspect ratio between about 0.5 to 3, each cluster separated by an open area having a length, wherein magnitude of the length is equal to or less than about 200 microns,
wherein the dense feature area includes at least one feature having a variable grating width, wherein the grating width increases towards a separation front.
14. An imprint lithography template, comprising:
a plurality of clusters, each cluster having at least one dense feature area, the dense features area having a plurality of features with an aspect ratio between about 0.5 to 3, each cluster separated by an open area having a length, wherein magnitude of the length is equal to or less than about 200 microns,
wherein the dense feature area includes at least one feature having a variable grating length, wherein the grating length increases towards a center of each feature.