Power semiconductor module
In the power semiconductor module, a wiring metal plate electrically connects between power semiconductor elements joined to the circuit pattern, and between the power semiconductor elements and the circuit pattern. Cylindrical main terminals are joined, substantially perpendicularly, to the wiring metal plate and the circuit pattern, respectively. A cylindrical control terminal is joined, substantially perpendicularly, to one of the power semiconductor elements.
1. A power semiconductor module comprising:
a circuit substrate including a metal heat sink and including a high thermal conductive insulation layer joined to one surface of the metal heat sink and including a circuit pattern provided on a surface of the high thermal conductive insulation layer, which surface is opposite to a surface joined to the metal heat sink;
power semiconductor elements joined to the circuit pattern;
a wiring metal plate for electrically connecting between the power semiconductor elements and between the power semiconductor elements and the circuit pattern;
cylindrical main terminals that are joined, substantially perpendicularly, to the wiring metal plate and the circuit pattern, respectively;
a cylindrical control terminal that is joined, substantially perpendicularly, to one of the power semiconductor elements; and
transfer molding resin for sealing, at least, the high thermal conductive insulation layer, the circuit pattern, the power semiconductor elements, the wiring metal plate, outer side surfaces of the main terminals, and an outer side surface of the control terminal, wherein
the main and control terminals each have an opening provided at a surface of the transfer molding resin.
2. The power semiconductor module according to claim 1 , wherein
the circuit pattern is a single metal pattern,
one set of an IGBT chip and a FWD chip are mounted on the metal pattern as the power semiconductor elements,
the IGBT chip and the FWD chip are connected to each other by the wiring metal plate,
the main terminals are joined to the wiring metal plate and the metal pattern, respectively, and
the control terminal is joined to a gate of the IGBT chip.
3. The power semiconductor module according to claim 1 , wherein
the circuit pattern includes a first metal pattern and a second metal pattern,
a first IGBT chip and a first FWD chip are mounted on the first metal pattern as the power semiconductor elements,
a second IGBT chip and a second FWD chip are mounted on the second metal pattern as the power semiconductor elements,
the first IGBT chip and the first FWD chip are connected to each other by a first wiring metal plate,
the second IGBT chip, the second FWD chip, and the first metal pattern are connected to each other by a second wiring metal plate,
the main terminals are joined to the first wiring metal plate, the second wiring metal plate, and the second metal pattern, respectively, and
the control terminals are joined to gates of the first IGBT chip and the second IGBT chip, respectively.
4. The power semiconductor module according to claim 2 , wherein
a wiring metal plate is joined to the gate of each IGBT chip, and
each control terminal is joined to the wiring metal plate.
5. The power semiconductor module according to claim 3 , wherein
a wiring metal plate is joined to the gate of each IGBT chip, and
each control terminal is joined to the wiring metal plate.
6. The power semiconductor module according to claim 1 , wherein the circuit substrate is a metal substrate including: a metal base plate that is the metal heat sink; an insulation sheet that is the high thermal conductive insulation layer joined to one surface of the metal base plate; and the circuit pattern provided on a surface of the insulation sheet, which surface is opposite to a surface joined to the metal base plate.
7. The power semiconductor module according to claim 1 , wherein the circuit substrate is a ceramic substrate including: a ceramic plate that is the high thermal conductive insulation layer; a heat-dissipating metal plate that is the metal heat sink joined to one surface of the ceramic plate; and the circuit pattern provided on another surface of the ceramic plate.
8. The power semiconductor module according to claim 1 , wherein an external terminal pin is inserted and connected to each of the main and control terminals each having the opening provided at the surface of the transfer molding resin.
9. The power semiconductor module according to claim 8 , wherein the external terminal pin is one selected from the group consisting of a first external terminal pin whose upper portion has a coil spring shape, a second external terminal pin whose upper portion has a plate spring shape, a third external terminal pin whose upper portion has a shape for solder connection, and a fourth external terminal pin whose upper portion has a shape for press-fit connection.