Liquid crystal display device
View Patent ↗In a liquid crystal display (LCD) device having a thin film transistor (TFT), the TFT includes a source electrode, a drain electrode and a semiconductor layer. At least one of the source electrode and drain electrode includes a first layer including copper and a second layer forming an oxide layer and covering the first layer. The semiconductor layer has a substantially linear current-voltage relationship with said source electrode or drain electrode including said first and second layers, when a voltage is applied between the semiconductor layer and said source electrode or drain electrode.
1. A liquid crystal display (LCD) device having a thin film transistor (TFT), the TFT comprising:
a source electrode;
a drain electrode, where at least one of said source electrode and drain electrode comprises:
a first layer comprising copper,
a second layer forming an oxide layer and covering said first layer; and
a semiconductor layer having a substantially linear current-voltage relationship with said source electrode or drain electrode including said first and second layers, when a voltage is applied between the semiconductor layer and said source electrode or drain electrode.
2. The liquid crystal display device of claim 1 , wherein the semiconductor layer comprises n + a-Si, a-Si, or microcrystal Si.
3. The liquid crystal display device of claim 1 , wherein the substantially linear current-voltage relationship comprises an ohmic contact when the voltage is applied within a range of ±10 volts.
4. The liquid crystal display device of claim 3 , wherein the substantially linear current-voltage relationship comprises an ohmic contact when the voltage is applied within a range of ±5 volts.
5. The liquid crystal display device of claim 1 , wherein the second layer covers the first layer so as to sandwich the first layer therebetween.
6. The liquid crystal display device of claim 1 , wherein the second layer is formed between the semiconductor layer and the first layer.
7. The liquid crystal display device of claim 1 , wherein the first layer is formed from copper alloy and an additional element of the copper alloy is manganese (Mn).
8. The liquid crystal display device of claim 1 , wherein an additional amount of the manganese is not less than 0.5 atom % and not more than 25 atom %.
9. The liquid crystal display device of claim 1 , wherein a principal component of the oxide layer is manganese (Mn) and a secondary component of the oxide layer is copper (Cu).
10. The liquid crystal display device of claim 1 , wherein a composition formula of the oxide layer is Cu x Mn y Si z O (0<X<Y, 0<Z<Y).
11. The liquid crystal display device of claim 1 , wherein the oxide layer comprises copper (Cu) and silicon (Si).
12. A liquid crystal display (LCD) device having a thin film transistor (TFT), the TFT comprising:
a source electrode;
a drain electrode, where at least one of said source electrode and drain electrode comprises:
a first layer comprising copper,
a second layer forming an oxide layer for sandwiching said first layer; and
a semiconductor layer having a substantially linear current-voltage relationship with said source electrode or drain electrode with said first and second layers, when a voltage is applied between the semiconductor layer and said source electrode or drain electrode.
13. The liquid crystal display device of claim 12 , wherein the semiconductor layer comprises n + a-Si, a-Si, or microcrystal Si.
14. The liquid crystal display device of claim 12 , wherein the substantially linear current-voltage relationship comprises an ohmic contact when the voltage is applied within a range of ±10 volts.
15. The liquid crystal display device of claim 14 , wherein the substantially linear current-voltage relationship comprises an ohmic contact when the voltage is applied within a range of ±5 volts.
16. The liquid crystal display device of claim 12 , wherein a principal component of the oxide layer is manganese (Mn) and a secondary component of the oxide layer is copper (Cu).
17. The liquid crystal display device of claim 12 , wherein a composition formula of the oxide layer is Cu x Mn y Si z O (0<X<Y, 0<Z<Y).
18. The liquid crystal display device of claim 12 , wherein the oxide layer comprises copper (Cu) and silicon (Si).
19. A liquid crystal display (LCD) device having a thin film transistor (TFT), the TFT comprising:
a source electrode;
a drain electrode, where at least one of said source electrode and drain electrode comprises:
a first layer comprising copper and manganese,
a second layer forming an oxide layer including manganese and covering said first layer; and
a semiconductor layer having a substantially linear current-voltage relationship with said source electrode or drain electrode with said first and second layers, when a voltage is applied between the semiconductor layer and said source electrode or drain electrode.
20. The liquid crystal display device of claim 19 , wherein the semiconductor layer comprises n + a-Si, a-Si, or microcrystal Si.
21. The liquid crystal display device of claim 19 , wherein the substantially linear current-voltage relationship comprises an ohmic contact when the voltage is applied within a range of ±10 volts.
22. The liquid crystal display device of claim 21 , wherein the substantially linear current-voltage relationship comprises an ohmic contact when the voltage is applied within a range of ±5 volts.
23. The liquid crystal display device of claim 19 , wherein the second layer covers the first layer so as to sandwich the first layer therebetween.
24. The liquid crystal display device of claim 19 , wherein the second layer is formed between the semiconductor layer and the first layer.
25. The liquid crystal display device of claim 19 , wherein a principal component of the oxide layer is manganese (Mn) and a secondary component of the oxide layer is copper (Cu).
26. The liquid crystal display device of claim 19 , wherein a composition formula of the oxide layer is Cu x Mn y Si z O (0<X<Y, 0<Z<Y).
27. The liquid crystal display device of claim 19 , wherein the oxide layer comprises copper (Cu) and silicon (Si).