Non-volatile memory using pyramidal nanocrystals as electron storage elements

1. A method of operating a non-volatile memory device wherein the method comprises the steps of:

providing at least one pyramidal silicon nanocrystal within a floating gate of the non-volatile memory device, the at least one pyramidal silicon nanocrystal formed during formation of the floating gate;

performing an erase operation in which electrons tunnel through a gate oxide layer of the non-volatile memory device from the at least one pyramidal silicon nanocrystal;

wherein the pyramidal silicon nanocrystal comprises an upward pointing peak that concentrates an electrical field at the peak of the pyramidal silicon nanocrystal; and

wherein the peak of the pyramidal silicon nanocrystal allows electrons to tunnel through the gate oxide layer at a lower tunneling voltage than that required for electrons tunneling from a hemispherical silicon nanocrystal.

2. The method that is set forth in claim 1 wherein the peak of the pyramidal silicon nanocrystal allows electrons to tunnel through the gate oxide layer with a shorter tunneling time than that required for electrons tunneling from a hemispherical silicon nanocrystal.

3. The method as set forth in claim 1 wherein each of the plurality of pyramidal silicon nanocrystals has a base that is approximately twelve nanometers (12 nm) and a height that is approximately fourteen nanometers (14 nm).

4. A method of operating a non-volatile memory device, the method comprises:

providing non-volatile memory device having a floating gate;

providing within the floating gate a plurality of pyramidal silicon nanocrystals operable for storing electrons, the plurality of pyramidal silicon nanocrystals formed during formation of the floating gate;

performing an erase operation in which the electrons tunnel through a gate oxide layer of the non-volatile memory device from the plurality of pyramidal silicon nanocrystals;

wherein each of the plurality of pyramidal silicon nanocrystals comprises an upward pointing peak that concentrates an electrical field at the peak of the pyramidal silicon nanocrystal; and

wherein the peaks of the pyramidal silicon nanocrystals allow electrons to tunnel through the gate oxide layer at a lower tunneling voltage than that required for electrons tunneling from a hemispherical silicon nanocrystal.

5. The method that is set forth in claim 4 wherein the peaks of the pyramidal silicon nanocrystals allow electrons to tunnel through the gate oxide layer with a shorter tunneling time than that required for electrons tunneling from a hemispherical silicon nanocrystal.

6. A method of forming a floating gate structure of a non-volatile memory device, the method comprising:

forming a tunnel oxide layer on a silicon substrate;

depositing amorphous silicon over the tunnel oxide layer;

forming a plurality of silicon nanocrystals from the amorphous silicon,

shaping each of the plurality of silicon nanocrystals into a pyramidal shape by performing a wet oxidation anneal process;

forming a gate oxide layer over the pyramidal shaped silicon nanocrystals to form a floating gate; and

forming a control gate layer over the floating gate.

7. The method as set forth in claim 6 wherein forming the plurality of silicon nanocrystals comprises:

depositing oxide over the amorphous silicon; and

performing a thermal anneal process to form the silicon nanocrystals.

8. The method as set forth in claim 7 wherein performing a thermal anneal process comprises:

performing a rapid thermal anneal process; and

performing a furnace anneal.

9. The method as set forth in claim 8 wherein the rapid thermal anneal process is to a temperature of between about 800 degrees Celsius and about 900 degrees Celsius.