Insulated gate bipolar transistor
Provided is an insulated gate bipolar transistor (IGBT) which occupies a small area and in which a thermal breakdown is suppressed. The IGBT includes: an n-type semiconductor layer ( 3 ); and a collector part formed in a surface portion of the n-type semiconductor layer ( 3 ). The collector part includes: an n-type buffer region ( 14 ); and a p + -type collector region ( 15 ) and an n + -type contact region ( 18 ) which are formed in the n-type buffer region ( 14 ).
1 . An insulated gate bipolar transistor, comprising:
a substrate region; and
a collector part formed in a surface portion of the substrate region,
wherein the collector part includes:
a buffer region;
a p + -type region formed in the buffer region; and
an n + -type region formed in the buffer region.
2 . An insulated gate bipolar transistor according to claim 1 , further comprising:
an emitter part;
an insulating gate; and
a gate insulating film formed between the insulating gate and the substrate region,
wherein the buffer region includes an n-type semiconductor,
wherein the substrate region includes an n-type semiconductor, and
wherein the emitter part includes:
a p-type well region;
an n + -type emitter region formed in the p-type well region; and
a p + -type contact region formed in the p-type well region.
3 . An insulated gate bipolar transistor according to claim 1 , further comprising:
an emitter part;
an insulating gate; and
a gate insulating film formed between the insulating gate and the substrate region,
wherein the buffer region includes a p-type semiconductor,
wherein the substrate region includes a p-type semiconductor, and
wherein the emitter part includes:
an n-type well region;
a p + -type emitter region formed in the n-type well region; and
an n + -type contact region formed in the n-type well region.