Liquid crystal display device and manufacturing method therefor
View Patent ↗The present invention includes a liquid crystal display device having an oxide film having high adhesiveness to a substrate to thereby prevent oxidation of a wiring material or the like, and includes, an electrode or a terminal electrode having high conductivity, and a manufacturing method therefor. Consequently, in the present invention, a liquid crystal display device has an electrode terminal of a TFT substrate, wherein the electrode is formed on an insulator and is comprised of a conductive layer mainly consisting of copper and an oxide covering an outer part, further the oxide is a layered structure of transparent electrodes, the layered portion having ohmic contact, and the oxide mainly consists of manganese oxide.
1. A method for manufacturing a liquid crystal display device (LCD), the method comprises a step of heat-treating a copper alloy formed on a substrate at temperatures ranging from 150° C. to 450° C., wherein:
an additional element of the copper alloy reacts with a silicon oxide from the substrate forming an oxide, which covers an outer portion of an interconnection including copper, and
the oxide comprises copper (Cu) and silicon (Si).
2. The method as recited in claim 1 , wherein the copper alloy is transformed into the interconnection including copper after the heat-treating step.
3. The method as recited in claim 1 , wherein the oxide has a thickness of 1 to 30 nm.
4. The method as recited in claim 1 , wherein the additional element of the copper alloy is Manganese (Mn).
5. The method as recited in claim 4 , wherein an additive amount of the manganese is ranging from 0.1 to 25 atom %.
6. The method as recited in claim 1 , wherein the heat-treating step is applied for a time period ranging from 2 minutes to 5 hours.
7. The method as recited in claim 1 , wherein the oxide further comprises manganese (Mn).
8. A method for manufacturing a liquid crystal display device (LCD), the method comprises a step of heat-treating a copper alloy formed on a substrate at temperatures ranging from 150° C. to 450° C., wherein:
an additional element of the copper alloy reacts with a silicon oxide from the substrate forming an oxide, which covers an outer portion of an interconnection including copper, and
a composition formula of the oxide is Cu x Mn y Si z O (0<X<Y, 0<Z<Y).
9. The method as recited in claim 8 , wherein the copper alloy is transformed into the interconnection including copper after the heat-treating step.
10. The method as recited in claim 8 , wherein the oxide has a thickness of 1 to 30 nm.
11. The method as recited in claim 8 , wherein the additional element of the copper alloy is manganese (Mn).
12. The method as recited in claim 11 , wherein an additive amount of the manganese is ranging from 0.1 to 25 atom %.
13. The method as recited in claim 8 , wherein the heat-treating step is applied for a time period ranging from 2 minutes to 5 hours.