IP Library Granted Patent US 7,888,809
Granted Patent B2
US 7,888,809 · App. 12/588,643 · Granted Feb 15, 2011

Semiconductor device and method of manufacturing the same

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Quick Facts
Patent No.
US 7,888,809
App. No.
12/588,643
Granted
Feb 15, 2011
Kind
B2
Abstract

A semiconductor device including a substrate, a semiconductor chip mounted on the substrate, and an encapsulation resin encapsulating the semiconductor chip, wherein the encapsulation resin contains a first resin region composed of a first resin composition, a second resin region composed of a second resin composition, and a mixed layer formed between the first resin region and the second resin region so as to have the first resin composition and the second resin composition mixed therein is provided.

Claims (19)

1. A semiconductor device comprising:

a substrate;

a semiconductor chip mounted over said substrate; and

an encapsulation resin encapsulating said semiconductor chip,

wherein said encapsulation resin contains a first resin region composed of a first resin composition, a second resin region composed of a second resin composition, and a mixed layer formed between said first resin region and said second resin region so as to have said first resin composition and said second resin composition mixed therein.

2. The semiconductor device as claimed in claim 1 ,

wherein each of the interface between said first resin region and said mixed layer and the interface between said second resin region and said mixed layer have a wavy profile.

3. The semiconductor device as claimed in claim 1 ,

wherein said first resin composition and said second resin composition differ in fluidity in the process of encapsulation.

4. The semiconductor device as claimed in claim 1 ,

wherein said first resin composition and said second resin composition differ in content (weight by %) of a filler relative to the respective total resin composition.

5. The semiconductor device as claimed in claim 1 ,

wherein said first resin composition and said second resin composition differ in species or ratio of source materials.

6. A method of manufacturing semiconductor device comprising encapsulating a semiconductor chip mounted over a substrate using an encapsulation resin,

wherein in said encapsulating the semiconductor chip, the encapsulation is allowed to proceed using a first resin composition and a second resin composition so that said encapsulation resin contains a first resin region composed of said first resin composition, a second resin region composed of said second resin composition, and a mixed layer formed between said first resin region and said second resin region so as to have said first resin composition and said second resin composition mixed therein.

7. The method manufacturing a semiconductor device as claimed in claim 6 ,

wherein the step of said encapsulating the semiconductor chip includes a process of subjecting a first preform composed of said first resin composition and a second preform composed of said second resin to composition compression molding at the same time.

8. The method manufacturing a semiconductor device as claimed in claim 6 ,

wherein said encapsulating the semiconductor chip includes a process of subjecting said first resin composition before being cured and said second resin composition before being cured to compression molding at the same time.

Assignments (2)
CHANGE OF NAME Recorded Oct 26, 2010
From: NEC ELECTRONICS CORPORATION
To: RENESAS ELECTRONICS CORPORATION
Reel/Frame 025193/0147 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Oct 22, 2009
From: MIYAGAWA, YUICHI; NODA, TAKAMITSU; MIYAMOTO, HIROYASU; TSUKANO, JUN
To: NEC ELECTRONICS CORPORATION
Reel/Frame 023434/0547 →