Broad band referencing reflectometer
A spectroscopy system is provided which is optimized for operation in the VUV region and capable of performing well in the DUV-NIR region. Additionally, the system incorporates an optical module which presents selectable sources and detectors optimized for use in the VUV and DUV-NIR. As well, the optical module provides common delivery and collection optics to enable measurements in both spectral regions to be collected using similar spot properties. The module also provides a means of quickly referencing measured data so as to ensure that highly repeatable results are achieved. The module further provides a controlled environment between the VUV source, sample chamber and VUV detector which acts to limit in a repeatable manner the absorption of VUV photons. The use of broad band data sets which encompass VUV wavelengths, in addition to the DUV-NIR wavelengths enables a greater variety of materials to be meaningfully characterized. Array based detection instrumentation may be exploited to permit the simultaneous collection of larger wavelength regions.
1. A method for analyzing a scattering or diffracting structure that includes a pattern having a pitch, the method comprising:
providing a below deep ultra-violet (DUV) wavelength reflectometer configured for normal incidence operation and having a light source that provides at least below DUV wavelength light, including vacuum ultra-violet (VUV) wavelengths at and below the pitch of the pattern;
obtaining reflectance data from the scattering or diffracting structure, including reflectance data for the VUV wavelengths; and
utilizing the reflectance data to obtain dimension information of the pattern.
2. The method of claim 1 , further comprising utilizing referencing to account for system and environmental changes to adjust reflectance data obtained through use of the reflectometer.
3. The method of claim 1 , wherein the reflectometer utilizes a non-polarizing optical path such that a polarization independent measurement may be obtained.
4. The method of claim 1 , wherein the below DUV wavelength light is non-polarized at a point in an optical path of the reflectometer at which the scattering or diffracting structure is located.
5. The method of claim 1 , wherein the dimension information comprises at least one of line width, sidewall angle, line height, trench depth, trench width and film thickness.
6. The method of claim 1 , wherein scatterometry techniques are utilize to determine the dimension information.
7. The method of claim 6 , wherein rigorous coupled wave analysis techniques are utilized to determine the dimension information.
8. A method for analyzing a scattering or diffracting structure, comprising:
providing a below deep ultra-violet (DUV) wavelength referencing reflectometer, comprising a source beam channel configured for normal incidence operation and having a non-polarizing optical system that provides at least below deep ultra-violet wavelength light, and comprising a reference beam channel that is balanced with the source beam channel; and
utilizing scatterometry techniques for obtaining dimensional information of the scattering or diffracting structure.
9. The method of claim 8 , further comprising utilizing referencing to account for system and environmental changes to adjust reflectance data obtained through use of the reflectometer.
10. The method of claim 9 , wherein the dimension information comprises at least one of line width, sidewall angle, line height, trench depth, trench width and film thickness.
11. The method of claim 8 , wherein the dimension information comprises at least one of line width, sidewall angle, line height, trench depth, trench width and film thickness.
12. The method of claim 8 , wherein rigorous coupled wave analysis techniques are utilized to determine the dimension information.
13. A scatterometry method to determine dimensional information of a patterned structure having a pitch, the method comprising:
providing a reflectometer that utilizes at least in part below deep ultra-violet (DUV) wavelength light, including vacuum ultra-violet (VUV) wavelengths at and below the pitch;
obtaining reflectance data from the scattering or diffracting structure, including reflectance data for at least some of the VUV wavelengths; and
utilizing scatterometry techniques to analyze the reflectance data to obtain dimension information of the patterned structure.
14. The method of claim 13 , wherein the reflectometer utilizes a non-polarizing optical path such that a polarization independent measurement may be obtained.
15. The method of claim 13 , wherein the below DUV wavelength light is non-polarized at a point in an optical path of the reflectometer at which the patterned structure is located.
16. The method of claim 13 , wherein the dimension information comprises at least one of line width, sidewall angle, line height, trench depth, trench width and film thickness.
17. The method of claim 13 , wherein the scatterometry techniques include rigorous coupled wave analysis techniques.
18. A method for analyzing a scattering or diffracting structure, comprising:
providing a below deep ultra-violet (DUV) wavelength reflectometer configured for normal incidence operation and having a light source that provides at least below DUV wavelength light;
obtaining reflectance data from the scattering or diffracting structure, including reflectance data for wavelengths below DUV wavelengths; and
utilizing the reflectance data to obtain dimension information of the scattering or diffracting structure including at least one dimension of 20 Åor less.
19. The method of claim 18 , wherein utilizing the reflectance data comprises using a balanced reference beam channel to account for system and environmental changes to adjust the reflectance data.
20. The method of claim 18 , wherein utilizing the reflectance data comprises applying scatterometry techniques to determine the dimension information.